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| 型號(hào)： | MCP201T-I/SN |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 8/40頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC LIN TXRX ON-BOARD VREG 8SOIC |
| 產(chǎn)品培訓(xùn)模塊： | Microchip MCP20xx LIN Transceiver Overview |
| 標(biāo)準(zhǔn)包裝： | 3,300 |
| 類型： | 線路收發(fā)器 |
| 驅(qū)動(dòng)器/接收器數(shù)： | 1/1 |
| 規(guī)程： | LIN |
| 電源電壓： | 6 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 帶卷 (TR) |
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MCP201
DS21730F-page 16
2007 Microchip Technology Inc.
2.3
AC Specifications
TABLE 2-1:
MCP201 THERMAL SPECIFICATIONS
AC Specifications
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for:
VBAT = 6.0V to 18.0V
TAMB = -40°C to +125°C
Symbol
Parameter
Min
Typical
Max
Units
Conditions
Bus Interface
|dV/dt|
Slope Rising and Falling Edges
1.0
2.0
3.0
V/s
(40% to 60%), No Load
|dV/dt|
Slope Rising and Falling edges
ALTERNATE
2.0
4.0
6.0
V/s(Note 1), No Load
tTRANSPD
Propagation Delay of Transmitter
—
6.0
stRECPD = max
tRECPD
Propagation Delay of Receiver
—
6.0
s(tRECPDR or tRECPDF)
tRECSYM
Symmetry of Propagation Delay of
Receiver Rising Edge with Respect
to Falling Edge
-2.0
—
2.0
stRECSYM = max
tTRANSSYM
Symmetry of Propagation Delay of
Transmitter Rising Edge with
Respect to Falling Edge
-2.0
—
2.0
stTRANSSYM = max
(tTRANSPDF - tRANSPDR)
Voltage Regulator
tBACTVE
Bus Activity to Voltage Regulator
Enabled
10
—
40
s
Bus debounce time
tVEVR
Voltage Regulator Enabled to
Ready
—50
200
s
t
VREGPOR
Voltage Regulator Enabled to
Ready after POR
——
2.5
ms
tCSOR
Chip Select to Operation Ready
0
50
200
s
tCSPD
Chip Select to Power-down
0
—
40
s
(Note 2) No CLOAD
tSHUTDOWN Short-Circuit to Shutdown
—
450
—
s
Characterized but not
tested
tSCREC
Short-Circuit Recovery Time
—
2.0
—
ms
Characterized but not
tested (Note 3)
Note 1:
The mode does not conform to LIN Bus specification version 1.3.
2:
Time depends on external capacitance and load.
3:
Internal current limited. 2.0 ms typical recovery time (RLBUS = 0
Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB =
25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance).
Sym
Parameter
Min
Typical
Max
Units
Test Conditions
θRECOVERY Recovery Temperature
(junction temperature)
—+135
—
°C
Characterized but not
tested
θSHUTDOWN Shutdown Temperature
(junction temperature)
—+155
—
°C
Characterized but not
tested
tTHERM
Thermal Recovery Time
(after Fault condition removed)
—
2.0
—
ms
Characterized but not
tested (Note 1)
Note 1:
Internal current limited. 2.0 ms typical recovery time (RLBUS = 0
Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB =
25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance).
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