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參數(shù)資料
| 型號(hào)： | MCP1827S-1802EAB |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 1.5A, Low Voltage, Low Quiescent Current LDO Regulator |
| 中文描述： | 1.5安培的電流，低電壓，低靜態(tài)電流LDO穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 20/32頁(yè) |
| 文件大小： | 968K |
| 代理商： | MCP1827S-1802EAB |
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MCP1827/MCP1827S
DS22001B-page 20
2006 Microchip Technology Inc.
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. Equation 5-4 can be
used to determine the package maximum internal
power dissipation.
EQUATION 5-4:
EQUATION 5-5:
=
EQUATION 5-6:
5.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
5.3.1
POWER DISSIPATION EXAMPLE
5.3.1.1
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (R
θ
JA
) is
derived from EIA/JEDEC standards for measuring
thermal resistance. The EIA/JEDEC specification is
JESD51. The standard describes the test method and
board specifications for measuring the thermal
resistance from junction to ambient. The actual thermal
resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792,
“A Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation”
(DS00792), for more information regarding this
subject.
P
D MAX
)
T
------------------------–
T
R
JA
)
(
)
=
P
D(MAX)
= Maximum device power dissipation
T
J(MAX)
= maximum continuous junction
temperature
T
A(MAX)
= maximum ambient temperature
R
θ
JA
= Thermal resistance from junction to
ambient
T
J RISE
)
P
D MAX
)
R
θ
JA
×
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature
P
D(MAX)
= Maximum device power dissipation
R
θ
JA
= Thermal resistance from junction to
ambient
T
J
T
J RISE
)
T
A
+
=
T
J
= Junction temperature
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature
T
A
= Ambient temperature
Package
Package Type = TO-220-5
Input Voltage
V
IN
= 3.3V ± 5%
LDO Output Voltage and Current
V
OUT
= 2.5V
I
OUT
= 1.5A
Maximum Ambient Temperature
T
A(MAX)
= 60°C
Internal Power Dissipation
P
LDO(MAX)
= (V
IN(MAX)
– V
OUT(MIN)
) x I
OUT(MAX)
P
LDO
= ((3.3V x 1.05) – (2.5V x 0.975))
x 1.5A
P
LDO
= 1.54 Watts
T
J(RISE)
= P
TOTAL
x R
θ
JA
T
JRISE
= 1.54 W x 29.3
°
C/W
T
JRISE
= 45.12
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MCP1827S-2502E/AB | 功能描述:低壓差穩(wěn)壓器 - LDO LDO 1.5A CMOS RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1827S-2502E/EB | 功能描述:低壓差穩(wěn)壓器 - LDO LDO 1.5A CMOS RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1827S-3002E/AB | 功能描述:低壓差穩(wěn)壓器 - LDO LDO 1.5A CMOS RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MCP1827S-3002E/AB | 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE 制造商:Microchip Technology Inc 功能描述:IC, LDO VOLT REG, 3V, 1.5A, TO-220-3 |
| MCP1827S-3002E/EB | 功能描述:低壓差穩(wěn)壓器 - LDO LDO 1.5A CMOS RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類(lèi)型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
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