參數(shù)資料
型號(hào): MCP1700T-3002EMB
廠商: Microchip Technology Inc.
元件分類(lèi): 基準(zhǔn)電壓源/電流源
英文描述: Low Quiescent Current LDO
中文描述: 低靜態(tài)電流低壓降穩(wěn)壓器
文件頁(yè)數(shù): 11/24頁(yè)
文件大?。?/td> 638K
代理商: MCP1700T-3002EMB
2007 Microchip Technology Inc.
DS21826B-page 11
MCP1700
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to
Figure 4-1
).
4.2
Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
4.3
Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
FIGURE 4-1:
Block Diagram.
+
-
MCP1700
V
IN
V
OUT
GND
+V
IN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
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