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| 型號： | MCP1700T-2502ETO |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Low Quiescent Current LDO |
| 中文描述： | 低靜態(tài)電流低壓降穩(wěn)壓器 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大?。?/td> | 638K |
| 代理商： | MCP1700T-2502ETO |
2007 Microchip Technology Inc.
DS21826B-page 13
MCP1700
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1700 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(1.6 μA x V
IN
). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The
temperature specified for the MCP1700 is +125
°
C
.
To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θ
JA
). The thermal resistance from junction to
ambient for the SOT-23 pin package is estimated at
230
°
C/W.
maximum
continuous
operating
junction
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type = SOT-23
Input Voltage Range = 2.3V to 3.2V
V
IN
maximum = 3.2V
V
OUT
typical = 1.8V
I
OUT
= 150 mA maximum
MCP1700
GND
V
OUT
V
IN
C
IN
1 μF Ceramic
C
OUT
1 μF Ceramic
V
OUT
1.8V
V
IN
(2.3V to 3.2V)
I
OUT
150 mA
P
LDO
V
IN MAX
)
)
V
OUT MIN
)
–
(
)
I
OUT MAX
)
)
×
=
P
LDO
= LDO Pass device internal power dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
T
J MAX
)
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
T
J(MAX)
= Maximum continuous junction
temperature.
P
TOTAL
= Total device power dissipation.
R
θ
JA
= Thermal resistance from junction to ambient.
T
AMAX
= Maximum ambient temperature.
P
D MAX
)
T
------------------------–
T
R
θ
JA
)
(
)
=
P
D(MAX)
= Maximum device power dissipation.
T
J(MAX)
= Maximum continuous junction
temperature.
T
A(MAX)
= Maximum ambient temperature.
R
θ
JA
= Thermal resistance from junction to ambient.
T
J RISE
)
P
D MAX
)
R
θ
JA
×
=
T
J(RISE)
= Rise in device junction temperature over
the ambient temperature.
P
TOTAL
= Maximum device power dissipation.
R
θ
JA
= Thermal resistance from junction to ambient.
T
J
T
J RISE
)
T
A
+
=
T
J
= Junction Temperature.
T
J(RISE)
= Rise in device junction temperature over
the ambient temperature.
T
A
= Ambient temperature.
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