參數(shù)資料
型號: MCP1630T
廠商: Microchip Technology Inc.
英文描述: High-Speed, Microcontroller-Adaptable, Pulse Width Modulator
中文描述: 高速微控制器適應(yīng)性,脈寬調(diào)制器
文件頁數(shù): 4/18頁
文件大小: 273K
代理商: MCP1630T
MCP1630
DS21896A-page 4
2004 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
V
DD
...................................................................................6.0V
Maximum Voltage on Any Pin ..(V
GND
- 0.3)V to (V
IN
+ 0.3)V
V
EXT
Short Circuit Current ...........................Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature, T
J
...........................+150°C
Continuous Operating Temperature Range ..-40°C to +125°C
ESD protection on all pins, Human Body Model
...............
3 kV
Notice:
Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 μF,
V
IN
for typical values = 5.0V, T
A
= -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Voltage
Input Operating Voltage
Input Quiescent Current
Oscillator Input
External Oscillator Range
Min. Oscillator High Time
Min. Oscillator Low Time
Oscillator Rise Time
Oscillator Fall Time
Oscillator Input Voltage Low
Oscillator Input Voltage High
Oscillator Input Capacitance
External Reference Input
Reference Voltage Input
Error Amplifier
Input Offset Voltage
Error Amplifier PSRR
Common Mode Input Range
Common Mode Rejection Ratio
Open-loop Voltage Gain
V
IN
I(V
IN
)
3.0
2.8
5.5
4.5
V
mA
I
EXT
= 0 mA, F
OSC IN
= 0 Hz
F
OSC
10
1
MHz
ns
Note 1
T
OH
_MIN.
T
OL
_MIN.
T
RISE
T
FALL
V
L
V
H
C
OSC
0.01
0.01
2.0
5
10
10
0.8
μs
μs
V
V
pf
Note 2
Note 2
V
REF
0
V
IN
V
Note 2, Note 3
V
OS
PSRR
V
CM
-4
80
0.1
99
80
95
+4
V
IN
mV
dB
V
dB
dB
V
IN
= 3.0V to 5.0V, V
CM
= 1.2V
Note 2, Note 3
V
IN
= 5V, V
CM
= 0V to 2.5V
R
L
= 5 k
to V
IN
/2, 100 mV < V
EAOUT
< V
IN
- 100 mV, V
CM
= 1.2V
RL = 5 k
to V
IN
/2
V
IN
= 5V
V
IN
= 5V, V
REF
= 1.2V, V
FB
= 1.4V,
V
COMP
= 2.0V
V
IN
= 5V, V
REF
= 1.2V, V
FB
= 1.0V,
V
COMP
= 2.0V, Absolute Value
GND - 0.3
85
A
VOL
Low-level Output
Gain Bandwidth Product
Error Amplifier Sink Current
V
OL
GBWP
I
SINK
5
25
3.5
11
GND + 50
mV
MHz
mA
Error Amplifier Source Current
I
SOURCE
-2
-9
mA
Note
1:
2:
Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
External oscillator input (OSC IN) rise and fall times between 10 ns and 10 μs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.
The reference input of the internal amplifier is capable of rail-to-rail operation.
3:
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