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| 型號(hào)： | MCP1630EMS |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | High-Speed, Microcontroller-Adaptable, Pulse Width Modulator |
| 中文描述： | 高速微控制器適應(yīng)性，脈寬調(diào)制器 |
| 文件頁(yè)數(shù)： | 5/18頁(yè) |
| 文件大小： | 273K |
| 代理商： | MCP1630EMS |
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2004 Microchip Technology Inc.
DS21896A-page 5
MCP1630
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 μF. T
A
= -40°C to +125°C.
Parameters
Sym
Min
Current Sense Input
Maximum Current Sense Signal
V
CS_MAX
0.85
0.9
0.95
V
Set by maximum error amplifier
clamp voltage, divided by 3.
Delay From CS to V
EXT
Minimum Duty Cycle
T
CS_VEXT
DC
MIN
—
—
12
—
25
0
ns
%
V
FB
= V
REF
+ 0.1V,
V
CS
= GND
V
IN
= 5V
Current Sense Input Bias Current
Internal Driver
R
DSON
P-channel
R
DSON
N-channel
V
EXT
Rise Time
I
CS_B
—
-0.1
—
μA
R
DSon_P
R
DSon_N
T
RISE
—
—
—
10
7
5.9
30
30
18
ns
C
L
= 100 pF
Typical for V
IN
= 3V
C
L
= 100 pF
Typical for V
IN
= 3V
V
EXT
Fall Time
T
FALL
—
6.2
18
ns
Protection Features
Under Voltage Lockout
UVLO
2.7
—
3.0
V
V
IN
falling, V
EXT
low state when in
UVLO
Under Voltage Lockout
Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
Note
1:
Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
2:
External oscillator input (OSC IN) rise and fall times between 10 ns and 10 μs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.
3:
The reference input of the internal amplifier is capable of rail-to-rail operation.
UVLO
_HYS
50
75
150
mV
T
SHD
T
SHD_HYS
—
—
150
18
—
—
°C
°C
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature
Range
Storage Temperature Range
Maximum Junction Temperature
Thermal Package Resistances
Thermal Resistance, MSOP8
T
A
-40
—
+125
°C
Steady state
T
A
T
J
-65
—
—
—
+150
+150
°C
°C
Transient
θ
JA
—
208
—
°C/W
Typical 4-layer board
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 μF,
V
IN
for typical values = 5.0V, T
A
= -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
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