參數(shù)資料
型號： MCP1407
廠商： Microchip Technology Inc.
英文描述： 6A High-Speed Power MOSFET Drivers
中文描述： 6A條高速功率MOSFET驅動器
文件頁數(shù)： 10/22頁
文件大?。?/td> 816K
代理商： MCP1407
MCP1406/07
DS22019A-page 10
2006 Microchip Technology Inc.
4.0
APPLICATION INFORMATION
4.1
General Information
MOSFET drivers are high-speed, high current devices
which are intended to provide high peak currents to
charge the gate capacitance of external MOSFETs or
IGBTs. In high frequency switching power supplies, the
PWM controller may not have the drive capability to
directly drive the power MOSFET. A MOSFET driver
like the MCP1406/07 family can be used to provide
additional drive current capability.
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (t
R
), fall time (t
F
), and propagation
delays (t
D1
and t
D2
). The MCP1406/07 family of
devices is able to make this transition very quickly.
Figure 4-1 and Figure 4-2 show the test circuits and
timing waveforms used to verify the MCP1406/07 tim-
ing.
FIGURE 4-1:
Waveform.
Inverting Driver Timing
FIGURE 4-2:
Waveform.
Non-Inverting Driver Timing
4.3
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.25A are
needed to charge a 2500 pF load with 18V in 20 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor are recommended to be placed in
parallel between the driver V
DD
and GND. A 1.0 μF low
ESR film capacitor and a 0.1 μF ceramic capacitor
placed between pins 1, 8 and 4, 5 should be used.
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
source for the required current.
4.4
PCB Layout Considerations
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of a ground
plane or ground trace located under the MOSFET gate
drive signals, separate analog and power grounds, and
local driver decoupling.
0.1 μF
Ceramic
+5V
10%
90%
10%
90%
10%
90%
18V
1 μF
0V
0V
MCP1406
C
L
= 2500 pF
Input
Input
Output
t
D1
t
F
t
D2
Output
t
R
V
DD
= 18V
90%
Input
t
D1
t
F
t
D2
Output
t
R
10%
10%
10%
+5V
18V
0V
0V
90%
90%
0.1 μF
Ceramic
1 μF
MCP1407
C
L
= 2500 pF
Input
Output
V
DD
= 18V
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相關代理商/技術參數(shù)
參數(shù)描述
MCP1407-E/AT 功能描述:功率驅動器IC 6A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MCP1407-E/MF 功能描述:功率驅動器IC 6A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MCP1407-E/P 功能描述:功率驅動器IC 4.5A Dual MOSFET RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MCP1407-E/PA 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:6A High-Speed Power MOSFET Drivers
MCP1407-E/SN 功能描述:功率驅動器IC 6A Single RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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