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參數(shù)資料
| 型號： | MCM72PB8ML4R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 72 Bit Burst RAM Multichip Module |
| 中文描述： | 256K X 72 CACHE SRAM MODULE, 4 ns, PBGA209 |
| 封裝： | PLASTIC, BGA-209 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 252K |
| 代理商： | MCM72PB8ML4R |
MCM72FB8ML MCM72PB8ML
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS: 2.5 V I/O SUPPLY
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDQ
VIL
VIH
VIH2
3.135
3.3
3.465
V
I/O Supply Voltage
2.375
2.5
2.9
V
Input Low Voltage
– 0.3
—
0.7
V
Input High Voltage
1.7
—
VDD + 0.3
VDDQ + 0.3
V
Input High Voltage I/O Pins
1.7
—
V
RECOMMENDED OPERATING CONDITIONS: 3.3 V I/O SUPPLY
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDQ
VIL
VIH
VIH2
3.135
3.3
3.465
V
I/O Supply Voltage
3.135
3.3
VDD
0.8
V
Input Low Voltage
– 0.5
—
V
Input High Voltage
2
—
VDD + 0.5
VDDQ + 0.5
V
Input High Voltage I/O Pins
2
—
V
VIH
20% tKHKH (MIN)
VSS
VSS – 1.0 V
Figure 1. Undershoot Voltage
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