參數(shù)資料
型號(hào)： MCM69F618CTQ12
廠商： MOTOROLA INC
元件分類： SRAM
英文描述： 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述： 64K X 18 CACHE SRAM, 12 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 203K
代理商： MCM69F618CTQ12
MCM69F618C
5
MOTOROLA FAST SRAM
TRUTH TABLE
(See Notes 1 through 4)
Next Cycle
Deselect
Deselect
Deselect
Deselect
Deselect
Begin Read
Begin Read
Continue Read
Continue Read
Continue Read
Continue Read
Suspend Read
Suspend Read
Suspend Read
Suspend Read
Begin Write
Begin Write
Begin Write
Continue Write
Continue Write
Suspend Write
Suspend Write
NOTES:
1. X = Don’t Care. 1 = logic high. 0 = logic low.
2. Write is defined as either 1) any SBx and SW low or 2) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
also remain negated at the completion of the write cycle to ensure proper write data hold times.
Address
Used
SE1
1
0
0
X
X
0
0
X
X
1
1
X
X
1
1
X
1
0
X
1
X
1
SE2
X
X
0
X
0
1
1
X
X
X
X
X
X
X
X
X
X
1
X
X
X
X
SE3
X
1
X
1
X
0
0
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
ADSP
X
0
0
1
1
0
1
1
1
X
X
1
1
X
X
1
X
1
1
X
1
X
ADSC
0
X
X
0
0
X
0
1
1
1
1
1
1
1
1
1
1
0
1
1
1
1
ADV
X
X
X
X
X
X
X
0
0
0
0
1
1
1
1
1
1
X
0
0
1
1
G 3
X
X
X
X
X
0
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
DQx
High–Z
High–Z
High–Z
High–Z
High–Z
DQ
DQ
High–Z
DQ
High–Z
DQ
High–Z
DQ
High–Z
DQ
High–Z
High–Z
High–Z
High–Z
High–Z
High–Z
High–Z
Write 2, 4
X
X
X
X
X
READ
READ
READ
READ
READ
READ
READ
READ
READ
READ
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
None
None
None
None
None
External
External
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
External
Next
Next
Current
Current
LINEAR BURST ADDRESS TABLE
(LBO = VSS)
1st Address (External )
2nd Address (Internal )
3rd Address (Internal )
4th Address (Internal )
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
INTERLEAVED BURST ADDRESS TABLE
(LBO = VDD)
1st Address (External )
2nd Address (Internal )
3rd Address (Internal )
4th Address (Internal )
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
WRITE TRUTH TABLE
Cycle Type
SGW
SW
SBa
SBb
Read
Read
Write Byte a
Write Byte b
Write All Bytes
Write All Bytes
H
H
H
H
H
L
H
L
L
L
L
X
X
H
L
H
L
X
X
H
H
L
L
X
相關(guān)PDF資料
PDF描述
MCM69F618CTQ12R 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ9 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69L736AZP8.5 Circular Connector; Body Material:Aluminum; Series:PT07; Number of Contacts:3; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:12-3
MCM69L736AZP10.5 4M Late Write HSTL
MCM69L818AZP10.5 ER 23C 16 12 8 4 SKT PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCM69F618CTQ12R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ8.5 制造商:Motorola Inc 功能描述:
MCM69F618CTQ8.5R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ9 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ9R 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*