參數(shù)資料
型號(hào)： MCM69F618CTQ10R
廠商： MOTOROLA INC
元件分類： SRAM
英文描述： 64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述： 64K X 18 CACHE SRAM, 10 ns, PQFP100
封裝： TQFP-100
文件頁數(shù)： 7/12頁
文件大小： 203K
代理商： MCM69F618CTQ10R
MCM69F618C
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VIL
VIH
3.135
3.3
3.6
V
Input Low Voltage
– 0.5*
—
0.8
V
Input High Voltage
2.0
—
5.5**
V
*VIL
≥
– 2 V for t
≤
tKHKH/2.
**VIH
≤
6 V for t
≤
tKHKH/2.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current (0 V
≤
Vin
≤
VDD) (Excluding LBO)
Output Leakage Current (0 V
≤
Vin
≤
VDD)
AC Supply Current (Device Selected,
All Outputs Open,
All Inputs Toggling at Vin
≤
VIL or
≥
VIH,
Cycle Time
≥
tKHKH min)
CMOS Standby Supply Current (Deselected,
Clock (K
)
Cycle Time
≥
tKHKH,
All Inputs Toggling at CMOS Levels
Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
Clock Running Supply Current (Deselected,
Clock (K) Cycle Time
≥
tKHKH,
All Other Inputs Held to Static CMOS Levels
Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V))
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
4. Device in Deselected mode as defined by the Truth Table.
Ilkg(I)
Ilkg(O)
IDDA
—
±
1
μ
A
—
±
1
μ
A
MCM69F618C–8.5
MCM69F618C–9
MCM69F618C–10
MCM69F618C–12
—
225
225
215
210
mA
1, 2, 3
MCM69F618C–8.5
MCM69F618C–9
MCM69F618C–10
MCM69F618C–12
ISB1
—
110
110
100
95
mA
4
MCM69F618C–8.5
MCM69F618C–9
MCM69F618C–10
MCM69F618C–12
ISB2
—
40
40
35
35
mA
4
VOL
VOH
—
0.4
V
2.4
—
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
CI/O
—
4
6
pF
Input/Output Capacitance
—
7
9
pF
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