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參數(shù)資料
| 型號(hào)： | MCM67H618A |
| 廠商： | Motorola, Inc. |
| 英文描述： | 64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 64K的× 18位BurstRAM同步快速靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | MCM67H618A |
MCM67H618A
2
MOTOROLA FAST SRAM
BLOCK DIAGRAM
(See Note)
B
C
DQ0 – DQ8
CLR
Q0
Q1
A0
A1
K
ADSC
A0 – A15
E
G
ADDRESS
REGISTER
WRITE
REGISTER
ENABLE
REGISTER
DATA–IN
REGISTERS
OUTPUT
BUFFER
64K x 18
MEMORY
ARRAY
ADV
BURST LOGIC
INTERNAL
ADDRESS
A0
′
A1
′
16
9
18
16
2
A2 – A15
A1 – A0
DQ9 – DQ17
9
9
9
9
9
UW
LW
ADSP
NOTE:
All registers are positive–edge triggered. The ADSC or ADSP signals control the duration of the burst and the start of the
next burst. When ADSP and E are sampled low, any ongoing burst is interrupted and a read (independent of W and ADSC)
is performed using the new external address. Alternatively, an ADSP–initiated two cycle WRITE can be performed by as-
serting ADSP, E, and a valid address on the first cycle, then negating both ADSP and ADSC and asserting LW and/or UW
with valid data on the second cycle (see Single Write Cycle in WRITE CYCLES timing diagram). Note that when E and
ADSC are high, ADSP is ignored – the external address is not registered in this case.
When ADSC is sampled low (and ADSP is sampled high), any ongoing burst is interrupted and a read or write (dependent
on W) is performed using the new external address. Chip enable (E) is sampled only when a new base address is loaded.
After the first cycle of the burst, ADV controls subsequent burst cycles. When ADV is sampled low, the internal address
is advanced prior to the operation. When ADV is sampled high, the internal address is not advanced, thus inserting a wait
state into the burst sequence accesses. Upon completion of a burst, the address will wrap around to its initial state. See
BURST SEQUENCE TABLE
. Write refers to either or both byte write enables (LW, UW).
BURST SEQUENCE TABLE
(See Note)
External Address
A15 – A2
A1
A0
1st Burst Address
A15 – A2
A1
A0
2nd Burst Address
A15 – A2
A1
A0
3rd Burst Address
A15 – A2
A1
A0
NOTE: The burst wraps around to its initial state upon completion.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCM67H618AFN12 | LJT 8C 8#16 SKT WALL RECP |
| MCM67H618AFN9 | 64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| MCM67M618AFN10 | Circular Connector; No. of Contacts:8; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:17-8 RoHS Compliant: No |
| MCM67M618A | 64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| MCM67M618AFN12 | LJT 23C 21#20 2#16 PIN PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM67H618AFN10 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| MCM67H618AFN12 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| MCM67H618AFN9 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| MCM67H618B | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
| MCM67H618BFN10 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM |
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