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參數(shù)資料
| 型號： | MCM63P631TQ117R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 64K X 32 CACHE SRAM, 4.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大?。?/td> | 328K |
| 代理商： | MCM63P631TQ117R |
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MCM63P636
1
Motorola, Inc. 1998
Advance Information
64K x 36 Bit Pipelined BurstRAM
Synchronous Fast Static RAM
The MCM63P636 is a 2M–bit synchronous fast static RAM designed to provide
burstable, high performance, secondary cache for advanced microprocessors.
It is organized as 64K words of 36 bits each. This device integrates input regis-
ters, an output register, a 2–bit address counter, and a high speed SRAM onto
a single monolithic circuit for reduced parts count in cache data RAM applica-
tions. Synchronous design allows for precise cycle control with the use of an ex-
ternal clock (K) and external strobe clock (SK).
Addresses (SA), data inputs (DQx), and all control signals are clock (K)
controlled through positive–edge–triggered noninverting registers. Data strobes
STRBA, STRBA, STRBB, and STRBB are strobe clock (SK) controlled through
positive–edge–triggered non–inverting registers. Strobe clock, 180 degrees out
of phase with clock (K), is only used with the data strobes such that they are
centered with data output on read cycles.
Burst sequences are initiated with ADS input pin, and subsequent burst
addresses are generated internally by MCM63P636.
Write cycles are internally self–timed and are initiated with address and control
logic by the rising edge of the clock (K) input. This feature eliminates complex
off–chip write pulse generation and provides increased timing flexibility for
incoming signals. Special logic enables the memory to accept data on the rising
edge of clock (K) a cycle after address and control signals.
For read cycles, the SRAMs output data is temporarily stored by an
edge–triggered output register and then released to the output buffers at the
second rising edge of clock (K) for a read latency of three cycles. Data strobes
rise and fall with SRAM output to help external devices receiving the data to
latch the data.
The MCM63P636 operates from a 3.3 V core power supply, a 2.0 V input power
supply, and a 2.0 V I/O power supply. These power supplies are designed so that
power sequencing is not required.
MCM63P636–250 = 3.9 ns Access/4 ns Cycle (250 MHz)
MCM63P636–225 = 4.3 ns Access/4.4 ns Cycle (225 MHz)
MCM63P636–200 = 4.9 ns Access/5 ns Cycle (200 MHz)
3.3 V
±
200 mV VDD Supply, 2.0 V VDDI and VDDQ Supply
Internally Self–Timed Late Write Cycle
Three–Cycle Single–Read Latency
Strobe Clock Input and Data Strobe Output Pins
On–Chip Output Enable Control
On–Chip Burst Advance Control
Four–Tick Burst
Power–On Reset Pin
Low Power Stop Clock Operation
Boundary Scan (PBGA Only)
JEDEC Standard 153–Pin PBGA and 100–Pin TQFP Packages
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MCM63P636/D
SEMICONDUCTOR TECHNICAL DATA
MCM63P636
ZP PACKAGE
PBGA
CASE 1107–01
TQ PACKAGE
TQFP
CASE 983A–01
3/16/98
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| MCM63P631TQ4.5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ4.5R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ7 | 制造商:MOT 功能描述:* |
| MCM63P631TQ7R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P631TQ8 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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