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參數(shù)資料
| 型號(hào)： | MCM6227AWJ25R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 1 Bit Static Random Access Memory |
| 中文描述： | 1M X 1 STANDARD SRAM, 25 ns, PDSO28 |
| 封裝： | 0.400 INCH, SOJ-28 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | MCM6227AWJ25R2 |
MCM6227A
6
MOTOROLA FAST SRAM
WRITE CYCLE 2
(E Controlled, See Notes 1 and 2)
6227A–20
6227A–25
6227A–35
6227A–45
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
tAVEL
tAVEH
tELEH,
tELWH
20
—
25
—
35
—
45
—
ns
3
Address Setup Time
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
15
—
17
—
20
—
25
—
ns
Enable to End of Write
15
—
17
—
20
—
25
—
ns
4, 5
Write Pulse Width
tWLEH
tDVEH
tEHDX
tEHAX
15
—
17
—
20
—
25
—
ns
Data Valid to End of Write
10
—
10
—
15
—
20
—
ns
Data Hold Time
0
—
0
—
0
—
0
—
ns
Write Recovery Time
0
—
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. All timings are referenced from the last valid address to the first transitioning address.
4. If E goes low coincident with or after W goes low, the output will remain in a high–impedance state.
5. If E goes high coincident with or before W goes high, the output will remain in a high–impedance state.
WRITE CYCLE 2
(E Controlled See Notes 1 and 2)
tEHDX
tDVEH
tEHAX
tELWH
tAVEL
tAVEH
DATA VALID
tAVAV
HIGH–Z
A (ADDRESS)
W (WRITE ENABLE)
E (CHIP ENABLE)
Q (DATA OUT)
D (DATA IN)
tELEH
tWLEH
ORDERING INFORMATION
(Order by Full Part Number)
Motorola Memory Prefix
Part Number
Package (WJ = 400 mil SOJ)
Full Part Numbers — MCM6227AWJ20
MCM6227AWJ20R2
MCM6227AWJ25R2
MCM6227AWJ35R2
MCM6227AWJ45R2
MCM6227AWJ25
MCM6227AWJ35
MCM6227AWJ45
Shipping Method (R2 = Tape and Reel, Blank = Rails)
Speed (20 = 20 ns, 25 = 25 ns, 35 = 35 ns, 45 = 45 ns)
MCM
6227A
WJ
XX
XX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCM6227AWJ35 | 1M x 1 Bit Static Random Access Memory |
| MCM6227AWJ35R2 | 1M x 1 Bit Static Random Access Memory |
| MCM6227AWJ45 | 1M x 1 Bit Static Random Access Memory |
| MCM6227AWJ45R2 | 1M x 1 Bit Static Random Access Memory |
| MCM6227B | Replaced by PTH12000W : |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM6227AWJ35 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227AWJ35R2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227AWJ45 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227AWJ45R2 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
| MCM6227B | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x 1 Bit Static Random Access Memory |
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