參數(shù)資料
型號(hào): MCM20014IBB
廠商: MOTOROLA INC
元件分類: 模擬信號(hào)調(diào)理
英文描述: 1/3” Color VGA Digital Image Sensor
中文描述: SPECIALTY ANALOG CIRCUIT, CQCC48
封裝: CERAMIC, LCC-48
文件頁(yè)數(shù): 46/54頁(yè)
文件大小: 761K
代理商: MCM20014IBB
MOTOROLA
MCM20014
46
POWER DISSIPATION
(VDD = 3.0V, VDD referenced to VSS; Ta = 25
°
C)
Symbol
Parameter
Condition
Typ
Unit
P
DYN
Dynamic Power
13.5 MHz MCLK Clock frequency
400
mW
P
STDBY
Standby Power
STDBY Pin Logic High
50
mW
P
AVG
Average Power
13.5 MHz Operation (using STDBY)
200
mW
MCM20014 MONOCHROME CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS
Symbol
Parameter
Typ
Unit
Notes
E
sat
Saturation Exposure
0.14
μ
J/cm
2
1
QE
Peak Quantum Efficiency (@550nm)
18
%
2
PRNU
Photoresponse Non-uniformity
12
% pk-pk
3
Notes:
1.For
λ
= 550 nm wavelength.
2.Refer to typical values from
Figure 3
, MCM20014 nominal spectral response.
3.For a 100 x 100 pixel region under uniform illumination with output signal equal to 80% of saturation signal.
MCM20014 COLOR CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS
Symbol
Parameter
Typ
Unit
Notes
E
sat
Saturation Exposure
0.3
μ
J/cm
2
1
QE
r
Red Peak Quantum Efficiency @
λ
= 650 nm
12
%
2
QE
g
Green Peak Quantum Efficiency @
λ
= 550 nm
11
%
2
QE
b
Blue Peak Quantum Efficiency @
λ
= 450 nm
8
%
2
Notes:
1.For
λ
= 550 nm wavelength.
2.Refer to typical values from
Figure 3
, MCM20014 nominal spectral response.
CMOS IMAGE SENSOR CHARACTERISTICS
Symbol
Parameter
Typ
Unit
Notes
Sensitivity
3.0
V/lux-sec
I
d
Photodiode Dark Current
0.2
nA/cm
2
DSNU
Dark Signal Non-Uniformity (Entire Field)
0.4
% rms
CTE
Pixel Charge Transfer Efficiency
0.9995
%
1
f
H
Horizontal Imager Frequency
11.5
MHz
4
X
ab
Blooming Margin - shuttered light
200
2,3
Notes:
1. Transfer efficiency of photosite
2. X
ab
represents the increase above the saturation-irradiance level (H
sat
) that the device can be exposed to before blooming of the pixel
will
occur.
3. No column streaking
4. At 30fps VGA
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