參數(shù)資料
型號： MCHC11F1CFNE4
廠商： Freescale Semiconductor
文件頁數(shù)： 108/158頁
文件大?。?/td> 0K
描述： IC MCU 8BIT 1K RAM 68-PLCC
標(biāo)準(zhǔn)包裝： 18
系列： HC11
核心處理器： HC11
芯體尺寸： 8-位
速度： 4MHz
連通性： SCI，SPI
外圍設(shè)備： POR，WDT
輸入/輸出數(shù)： 30
程序存儲器類型： ROMless
EEPROM 大小： 512 x 8
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 4.75 V ~ 5.25 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x8b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 68-LCC（J 形引線）
包裝： 管件
OPERATING MODES AND ON-CHIP MEMORY
TECHNICAL DATA
4-15
Recall that zeros must be erased by a separate erase operation before programming.
The following example of how to program an EEPROM byte assumes that the appro-
priate bits in BPROT have been cleared and the data to be programmed is present in
accumulator A.
4.4.1.2 EEPROM Bulk Erase
To erase the EEPROM, ensure that the proper bits of the BPROT register are cleared,
then complete the following steps using the PPROG register:
1. Write to PPROG with the ERASE, EELAT, and appropriate BYTE and ROW
bits set.
2. Write to the appropriate EEPROM address with any data. Row erase only re-
quires a write to any location in the row. Bulk erase is accomplished by writing
to any location in the array.
3. Write to PPROG with ERASE, EELAT, EEPGM, and the appropriate BYTE and
ROW bits set.
4. Delay for 10 ms or more, as appropriate.
5. Clear the EEPGM bit in PPROG to turn off the high voltage.
6. Return to step 1 for next byte or row or proceed to step 7.
7. Clear the PPROG register to reconfigure the EEPROM address and data buses
for normal operation.
The following is an example of how to bulk erase the 512-byte EEPROM. The CONFIG
register is not affected in this example. When bulk erasing the CONFIG register, CON-
FIG and the 512-byte array are all erased.
4.4.1.3 EEPROM Row Erase
The following example shows how to perform a fast erase of large sections of EE-
PROM and assumes that index register X contains the address of a location in the de-
sired row.
PROG
LDAB
#$02
EELAT=1, EEPGM=0
STAB
$103B
Set EELAT bit
STAA
$FE00
Store data to EEPROM address
LDAB
#$03
EELAT=1, EEPGM=1
STAB
$103B
Turn on programming voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
BULKE
LDAB
#$06
ERASE=1, EELAT=1, EEPGM=0
STAB
$103B
Set EELAT bit
STAB
$FE00
Store any data to any EEPROM address
LDAB
#$07
EELAT=1, EEPGM=1
STAB
$103B
Turn on programming voltage
JSR
DLY10
Delay 10 ms
CLR
$103B
Turn off high voltage and set to READ mode
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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MCHC11F1CFNE5 功能描述:8位微控制器 -MCU 8B MCU 1KRAM 512EE RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MCHC11F1MFNE4 制造商:Freescale Semiconductor 功能描述:8-BIT MCU,1KRAM,512EE,A/ - Rail/Tube
MCHC11F1VFNE3 功能描述:8位微控制器 -MCU 8B MCU 1KRAM 512EE RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MCHC11KS1CFNE4 功能描述:8位微控制器 -MCU 68HC11KS4 RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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