參數(shù)資料
型號(hào): MCH6406
元件分類: JFETs
英文描述: 5 A, 30 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MCPH6, 6 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 33K
代理商: MCH6406
MCH6406
No.7297-1/4
Features
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
5A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
20
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=2.5A
2.8
4
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=2.5A, VGS=10V
37
48
m
RDS(on)2
ID=1.2A, VGS=4V
63
88
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
460
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
95
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
See specified Test Circuit.
12
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
32
ns
Fall Time
tf
See specified Test Circuit.
18
ns
Marking : KF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN7297A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
O3105PE MS IM TB-00001872 / 83002 TS IM TA-100190
MCH6406
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相關(guān)PDF資料
PDF描述
MCH6445 4 A, 60 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET
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