- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄97600 > MCH3460 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MCH3460 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCPH3, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | MCH3460 |
MCH3460
No.8111-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8111
MCH3460
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
2.5
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
10
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1.5A
1.2
2
S
RDS(on)1
ID=1.5A, VGS=10V
79
105
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=1A, VGS=4V
150
210
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
187
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
33
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.8
ns
Rise Time
tr
See specified Test Circuit.
18.5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
22
ns
Fall Time
tf
See specified Test Circuit.
12
ns
Marking : LM
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2504 TS IM TB-00000649
相關PDF資料 |
PDF描述 |
|---|---|
| MCH4013 | RF SMALL SIGNAL TRANSISTOR |
| MCH4013 | RF SMALL SIGNAL TRANSISTOR |
| MCH4017TL | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MCH4017 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MCH5811 | 1500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MCH3474 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3474_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3474-TL-E | 功能描述:MOSFET N-CH 4A 30V MCPH3 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:* 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MCH3474-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MCH3475 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復。