參數(shù)資料
型號: MCH3306
廠商: Sanyo Electric Co.,Ltd.
英文描述: External Power Supply; Series:AEL20; Output Voltage:5V; Output Power Max:15W; Output Current:3A; No. of Outputs:1 RoHS Compliant: Yes
中文描述: 超高速開關應用
文件頁數(shù): 1/4頁
文件大?。?/td> 28K
代理商: MCH3306
MCH3306
No.6900-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6900
MCH3306
Package Dimensions
unit : mm
2167
[MCH3306]
12201 TS IM TA-3149
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0
0
2
1
2.0
0.65
0.3
0
0
1
2
3
0.15
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--20
±
10
--2
--8
PW
10
μ
s, duty cycle
1%
Mounted on a ceramic board (900mm
2
0.8mm)
1
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=
±
8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--4V
ID=--0.5A, VGS=--2.5V
ID=--0.1A, VGS=--1.8V
--20
V
μ
A
μ
A
V
S
m
m
m
--10
±
10
--1.0
--0.3
2.1
3.0
110
140
180
145
200
260
Static Drain-to-Source On-State Resistance
Marking : JF Continued on next page.
相關PDF資料
PDF描述
MCH3307 P CHANNEL MOS SILICON TRANSISTOR
MCH3308 Ultrahigh-Speed Switching Applications
MCH3309 Ultrahigh-Speed Switching Applications
MCH3310 Ultrahigh-Speed Switching Applications
MCH3312 Ultrahigh-Speed Switching Applications
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