參數(shù)資料
型號(hào)： MCF5275LCVM133
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, 133 MHz, RISC PROCESSOR, PBGA196
封裝： MAPBGA-196
文件頁(yè)數(shù)： 13/44頁(yè)
文件大?。?/td> 1242K
代理商： MCF5275LCVM133
MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 2
Preliminary—Subject to Change Without Notice
Preliminary Electrical Characteristics
Freescale Semiconductor
20
8.3
ESD Protection
5
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
The average chip-junction temperature (TJ) in °C can be obtained from:
(1)
Where:
TA
= Ambient Temperature,
°C
Θ
JMA
= Package Thermal Resistance, Junction-to-Ambient,
°C/W
PD
= PINT + PI/O
PINT
= IDD × VDD, Watts - Chip Internal Power
PI/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is
neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD × (TA + 273 °C) + ΘJMA × PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at
equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1)
and (2) iteratively for any value of TA.
Table 9. ESD Protection Characteristics1, 2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the
device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
HBM
2000
V
ESD Target for Machine Model
MM
200
V
HBM Circuit Description
Rseries
1500
C
100
pF
MM Circuit Description
Rseries
0
C
200
pF
Number of pulses per pin (HBM)
positive pulses
negative pulses
—
1
—
Number of pulses per pin (MM)
positive pulses
negative pulses
—
3
—
Interval of Pulses
—
1
sec
TJ
TA
PD ΘJMA
×
(
)
+
=
PD
KTJ 273°C
+
()
÷
=
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