參數(shù)資料
型號: MCF52223CAF66
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 80 MHz, RISC MICROCONTROLLER, PQFP100
封裝: 14 X 14 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LQFP-100
文件頁數(shù): 25/55頁
文件大?。?/td> 980K
代理商: MCF52223CAF66
MCF52223 ColdFire Microcontroller, Rev. 3
Electrical Characteristics
Freescale Semiconductor
31
2.4
Flash Memory Characteristics
The flash memory characteristics are shown in Table 25 and Table 26.
6 Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
The average chip-junction temperature (TJ) in C can be obtained from:
(1)
Where:
TA
= ambient temperature,
C
JA
= package thermal resistance, junction-to-ambient,
C/W
PD
= PINT PI/O
PINT
= chip internal power, IDD VDD, watts
PI/O
= power dissipation on input and output pins — user determined, watts
For most applications PI/O PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD (TA + 273 C) + JMA PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for
any value of TA.
Table 25. SGFM Flash Program and Erase Characteristics
(VDD = 3.0 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
fsys(R)
0—
66.67 or 801
1
Depending on packaging; see the orderable part number summary.
MHz
System clock (program/erase)2
2 Refer to the flash memory section for more information
fsys(P/E)
0.15
66.67 or 801
MHz
Table 26. SGFM Flash Module Life Characteristics
(VDD = 3.0 to 3.6 V)
Parameter
Symbol
Value
Unit
Maximum number of guaranteed program/erase cycles1 before failure
1 A program/erase cycle is defined as switching the bits from 1
0 1.
P/E
10,0002
2 Reprogramming of a flash memory array block prior to erase is not required.
Cycles
Data retention at average operating temperature of 85
C
Retention
10
Years
TJ
TA
PD JMA
+
=
PD
KTJ 273C
+
=
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