參數(shù)資料
型號: MCF52210CVM66
廠商: Freescale Semiconductor
文件頁數(shù): 26/56頁
文件大小: 0K
描述: IC MCU 64K FLASH 66MHZ 81MAPBGA
標準包裝: 1,200
系列: MCF5221x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 66MHz
連通性: I²C,SPI,UART/USART,USB OTG
外圍設備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 55
程序存儲器容量: 64KB(64K x 8)
程序存儲器類型: 閃存
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 81-LBGA
包裝: 托盤
Electrical Characteristics
MCF52211 ColdFire Microcontroller, Rev. 2
Freescale Semiconductor
32
2.6
ESD Protection
2.7
DC Electrical Specifications
Table 26. ESD Protection Characteristics1, 2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2 A device is defined as a failure if after exposure to ESD pulses the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD target for Human Body Model
HBM
2000
V
ESD target for Machine Model
MM
200
V
HBM circuit description
Rseries
1500
C
100
pF
MM circuit description
Rseries
0
C
200
pF
Number of pulses per pin (HBM)
Positive pulses
Negative pulses
1
Number of pulses per pin (MM)
Positive pulses
Negative pulses
3
Interval of pulses
1
sec
Table 27. DC Electrical Specifications 1
Characteristic
Symbol
Min
Max
Unit
Supply voltage
VDD
3.0
3.6
V
Standby voltage
VSTBY
1.8
3.5
V
Input high voltage
VIH
0.7
V
DD
4.0
V
Input low voltage
VIL
VSS – 0.3
0.35
V
DD
V
Input hysteresis2
VHYS
0.06
V
DD
—mV
Low-voltage detect trip voltage (VDD falling)
VLVD
2.15
2.3
V
Low-voltage detect hysteresis (VDD rising)
VLVDHYS
60
120
mV
Input leakage current
Vin = VDD or VSS, digital pins
Iin
–1.0
1.0
A
Output high voltage (all input/output and all output pins)
IOH = –2.0 mA
VOH
VDD – 0.5
V
Output low voltage (all input/output and all output pins)
IOL = 2.0mA
VOL
—0.5
V
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