參數(shù)資料
型號(hào): MCF52100CVM80J
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 22/56頁(yè)
文件大小: 0K
描述: IC MCU 64K FLASH 80MHZ 81MAPBGA
標(biāo)準(zhǔn)包裝: 240
系列: MCF521xx
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 80MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 56
程序存儲(chǔ)器容量: 64KB(64K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 16K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 81-LBGA
包裝: 托盤
MCF52110 ColdFire Microcontroller, Rev. 1
Electrical Characteristics
Freescale Semiconductor
29
2.4
Flash Memory Characteristics
The flash memory characteristics are shown in Table 23 and Table 24.
1
JA and jt parameters are simulated in conformance with EIA/JESD Standard 51-2 for natural convection. Freescale
recommends the use of
JA and power dissipation specifications in the system design to prevent device junction
temperatures from exceeding the rated specification. System designers should be aware that device junction temperatures
can be significantly influenced by board layout and surrounding devices. Conformance to the device junction temperature
specification can be verified by physical measurement in the customer’s system using the
jt parameter, the device power
dissipation, and the method described in EIA/JESD Standard 51-2.
2 Per JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal.
3 Per JEDEC JESD51-6 with the board JESD51-7) horizontal.
4 Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
5 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
6 Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
The average chip-junction temperature (TJ) in C can be obtained from:
(1)
Where:
TA
= ambient temperature,
C
JA
= package thermal resistance, junction-to-ambient,
C/W
PD
= PINT PI/O
PINT
= chip internal power, IDD VDD, watts
PI/O
= power dissipation on input and output pins — user determined, watts
For most applications PI/O PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD (TA + 273 C) + JMA PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for
any value of TA.
Table 23. SGFM Flash Program and Erase Characteristics
(VDD = 3.0 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
fsys(R)
0—
50–801
1
Depending on packaging; see the orderable part number summary.
MHz
System clock (program/erase)2
2 Refer to the flash memory section for more information
fsys(P/E)
0.15
102.4
MHz
TJ
TA
PD JMA
+
=
PD
KTJ 273C
+
=
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