參數(shù)資料
型號(hào): MCF51QE128
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: 32-Bit Version 1 ColdFire㈢ Central Processor Unit (CPU)
中文描述: 32位版本1的ColdFire㈢中央處理器(CPU)的
文件頁(yè)數(shù): 31/38頁(yè)
文件大小: 429K
代理商: MCF51QE128
Electrical Characteristics
MCF51QE128 Series Advance Information Data Sheet, Rev. 3
Freescale Semiconductor
31
3.11.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported
emissions levels.
3.11.2
Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale test method. The
measurement is performed with the microcontroller installed on a custom EMC evaluation board and running specialized EMC
test software designed in compliance with the test method. The conducted susceptibility is determined by injecting the transient
susceptibility signal on each pin of the microcontroller. The transient waveform and injection methodology is based on IEC
61000-4-4 (EFT/B). The transient voltage required to cause performance degradation on any pin in the tested configuration is
greater than or equal to the reported levels unless otherwise indicated by footnotes below
Table 20
.
Table 19. Radiated Emissions, Electric Field
Parameter
Symbol
Conditions
Frequency
f
OSC
/f
BUS
Level
1
(Max)
1
Data based on qualification test results.
Unit
Radiated emissions,
electric field
V
RE_TEM
V
DD
= TBD
T
A
= +25
o
C
package type
TBD
0.15 – 50 MHz
TBD crystal
TBD bus
TBD
dB
μ
V
50 – 150 MHz
TBD
150 – 500 MHz
TBD
500 – 1000 MHz
TBD
IEC Level
TBD
SAE Level
TBD
Table 20. Conducted Susceptibility, EFT/B
Parameter
Symbol
Conditions
f
OSC
/f
BUS
Result
Amplitude
1
(Min)
1
Data based on qualification test results. Not tested in production.
Unit
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
V
CS_EFT
V
DD
= TBD
T
A
= +25
o
C
package type
TBD
TBD crystal
TBD bus
A
TBD
kV
B
TBD
C
TBD
D
TBD
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