參數(shù)資料
型號(hào): MCF51MM256VMB
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 43/57頁(yè)
文件大小: 0K
描述: IC MCU 32BIT 256K COLDF 81-PBGA
標(biāo)準(zhǔn)包裝: 1,200
系列: MCF51MM
核心處理器: Coldfire V1
芯體尺寸: 32-位
速度: 50MHz
連通性: CAN,EBI/EMI,I²C,SCI,SPI,USB OTG
外圍設(shè)備: LVD,PWM,WDT
輸入/輸出數(shù): 48
程序存儲(chǔ)器容量: 256KB(256K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 32K x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x16b,D/A 1x12b
振蕩器型: 外部
工作溫度: -40°C ~ 105°C
封裝/外殼: 81-LBGA
包裝: 托盤
Electrical Characteristics
Freescale Semiconductor
48
3.14 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51MM256RM).
Table 24. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
–40C to 105CVprog/erase
1.8
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
sD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40C to + 105C
T = 25C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
100,000
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
tD_ret
15
100
years
C
MCF51MM256/128, Rev. 5
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MCF51MM256VMBJ 功能描述:32位微控制器 - MCU 32BIT 256K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:90 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT
MCF51MM256VML 功能描述:32位微控制器 - MCU 32BIT 256K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:90 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT
MCF51MM256VMLJ 功能描述:32位微控制器 - MCU 32BIT 256K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:90 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT
MCF51QE128 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:32-Bit Version 1 ColdFire㈢ Central Processor Unit (CPU)
MCF51QE128_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:32-Bit Version 1 ColdFire㈢ Central Processor Unit (CPU)