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參數(shù)資料
| 型號： | MCF51JE256VMB |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PBGA81 |
| 封裝： | 10 X 10 MM, ROHS COMPLIANT, MAPBGA-81 |
| 文件頁數(shù)： | 39/50頁 |
| 文件大?。?/td> | 1200K |
| 代理商： | MCF51JE256VMB |
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Preliminary Electrical Characteristics
Freescale Semiconductor
1-4
3.14
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51JE256RM).
Table 24. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
-40
°C to 105°CV
prog/erase
1.8
—
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
μsD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40°C to + 105°C
T = 25
°C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
°C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
C
Preliminary — Subject to Change
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCF51JE256VMBJ | 制造商:Freescale Semiconductor 功能描述:256K FLASH-NON-ANALOG IP - Bulk |
| MCF51JE256VML | 功能描述:32位微控制器 - MCU 256k Flash Non-analog IP RoHS:否 制造商:Texas Instruments 核心:C28x 處理器系列:TMS320F28x 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:90 MHz 程序存儲器大小:64 KB 數(shù)據(jù) RAM 大小:26 KB 片上 ADC:Yes 工作電源電壓:2.97 V to 3.63 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:LQFP-80 安裝風(fēng)格:SMD/SMT |
| MCF51JE256VMLJ | 制造商:Freescale Semiconductor 功能描述:256K FLASH-NON-ANALOG IP - Bulk |
| MCF51JF128 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCF51JF128 |
| MCF51JF128_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCF51JF128 |
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