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參數(shù)資料
| 型號(hào)： | MCD500-18IO1 |
| 廠商： | IXYS CORP |
| 元件分類： | 晶閘管 |
| 中文描述： | 1294 A, 1800 V, SCR |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 447K |
| 代理商： | MCD500-18IO1 |
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 1 of 11
March, 2005
IXYS
Date: 17.03.2005
Data Sheet Issue: 2
Thyristor/Diode Modules M## 500
Absolute Maximum Ratings
VRRM
VDRM
[V]
MCC
MCD
MDC
MCA
MCK
MCDA
MDCA
1200
500-12io1
1400
500-14io1
1600
500-16io1
1800
500-18io1
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage
1)
1200-1800
V
VDSM
Non-repetitive peak off-state voltage
1)
1200-1800
V
VRRM
Repetitive peak reverse voltage
1)
1200-1800
V
VRSM
Non-repetitive peak reverse voltage
1)
1300-1900
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
IT(AV)M
Maximum average on-state current, TC = 89°C
2)
500
A
IT(AV)M
Maximum average on-state current. TC = 85°C
2)
545
A
IT(AV)M
Maximum average on-state current. TC = 100°C
2)
376
A
IT(RMS)M
Nominal RMS on-state current, TC = 55°C
2)
1294
A
IT(d.c.)
D.C. on-state current, TC = 55°C
1029
A
ITSM
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM
3)
16.5
kA
ITSM2
Peak non-repetitive surge tp = 10 ms, VRM
≤ 10V
3)
18.2
kA
I
2tI2t capacity for fusing tp = 10 ms, VRM = 60%VRRM 3)
1.36×10
6
A
2s
I
2t
I
2t capacity for fusing tp = 10 ms, VRM ≤ 10 V 3)
1.66×10
6
A
2s
Critical rate of rise of on-state current (repetitive)
4)
150
A/s
(di/dt)cr
Critical rate of rise of on-state current (non-repetitive)
4)
300
A/s
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
4
W
PGM
Peak forward gate power
30
W
VISOL
Isolation Voltage
5)
3500
V
TVj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr
≤ 0.5s, TC = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
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