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| 型號(hào)： | MC9SDP256BCPVR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112 |
| 封裝： | LQFP-112 |
| 文件頁(yè)數(shù)： | 6/134頁(yè) |
| 文件大小： | 1454K |
| 代理商： | MC9SDP256BCPVR2 |
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MC9S12DP256B Device User Guide — V02.13
103
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE:
All values shown in Table A-12 are target values and subject to further extensive
characterization.
NOTE:
Flash cycling performance is 10 cycles at -40C to + 125C. Data retention is
specified for 15 years.
NOTE:
EEPROM cycling performance is 10K cycles at -40C to +125C. Data retention is
specified for 5 years on words after cycling 10K times. However if only 10 cycles
are executed on a word the data retention is specified for 15 years.
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.
4. urst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
Table A-12 NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Cycles
Data
Retention
Lifetime
Unit
1
C Flash/EEPROM (-40C to + 125C)
10
15
Years
2
C EEPROM (-40C to + 125C)
10,000
5
Years
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