
Appendix A Electrical Characteristics
MC9S08SG32 Data Sheet, Rev. 8
Freescale Semiconductor
323
A.13
Flash Specications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. Flash Characteristics
#
C
Characteristic
Symbol
Min
Typical
Max
Unit
Temp
Rated
Standar
d
AEC
Grade
0
1—
Supply voltage for program/erase
Vprog/era
se
2.7
—
5.5
V
2—
Supply voltage for read operation
VRead
2.7
—
5.5
V
3—
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
4—
Internal FCLK period (1/fFCLK)
tFcyc
5
—
6.67
μs
5—
Byte program time (random
location)2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tprog
9tFcyc
6—
Byte program time (burst mode)2
tBurst
4tFcyc
7—
Page erase time2
tPage
4000
tFcyc
8—
Mass erase time2
tMass
20,000
tFcyc
9C
Program/erase endurance3
3 Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
denes typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
nFLPE
cycles
TL to TH = –40°C to +125°C
10,000
—
—
TL to TH = –40°C to +150°C
10,000
—
T = 25
°C
10,000
100,000
—
10
C
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale denes typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years