參數(shù)資料
型號： MC9S08SE8MTGE
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO16
封裝： 0.65 MM PITCH, ROHS COMPLIANT, TSSOP-16
文件頁數(shù)： 37/38頁
文件大?。?/td> 2486K
代理商： MC9S08SE8MTGE
MC9S08SE8 Series MCU Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
8
TJ = TA + (PD × θJA)
Eqn. 1
where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user-determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.4
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification ESD stresses were performed for the human body model (HBM), the
machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table 5. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
—
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
—
相關(guān)PDF資料
PDF描述
MC9S08SE8MRLE 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDIP28
MC9S08SE8CWLE 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO28
MC9S08SG16JTGR 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PDSO16
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S08SE8MWL 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9S08SE8VRL 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9S08SE8VTG 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9S08SE8VTGR 制造商:Freescale Semiconductor 功能描述:LOW COST 8 BIT 5V MCU 制造商:Freescale Semiconductor 功能描述:LOW COST 8 BIT 5V MCU - Tape and Reel 制造商:Freescale Semiconductor 功能描述:8-bit Microcontrollers - MCU LOW COST 8 BIT 5V MCU
MC9S08SE8VWL 功能描述:8位微控制器 -MCU LO COST 8 BIT 5V MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
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