The average chip-junction temperature (T" />
參數(shù)資料
型號(hào): MC9S08QA2CPAE
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 29/32頁(yè)
文件大?。?/td> 0K
描述: IC MCU 8BIT 2K FLASH 8-DIP
產(chǎn)品培訓(xùn)模塊: 8-Bit Microcontroller Overview
標(biāo)準(zhǔn)包裝: 50
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 20MHz
外圍設(shè)備: LVD,POR,PWM,WDT
輸入/輸出數(shù): 4
程序存儲(chǔ)器容量: 2KB(2K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 160 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 4x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 8-DIP(0.300",7.62mm)
包裝: 管件
產(chǎn)品目錄頁(yè)面: 728 (CN2011-ZH PDF)
MC9S08QA4 Series MCU Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
6
The average chip-junction temperature (TJ) in °C can be obtained from:
TJ = TA + (PD × θJA)
Eqn. 1
where:
—TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
—PD = Pint + PI/O
—Pint = IDD × VDD, Watts — chip internal power
—PI/O = Power dissipation on input and output pins — user-determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
3.4
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
Table 3. Thermal Characteristics
Rating
Symbol
Value
Unit
Operating temperature range
(packaged)
TA
TL to TH
–40 to 85
°C
Thermal resistance
Single-layer board
8-pin PDIP
θ
JA
113
°C/W
8-pin NB SOIC
150
8-pin DFN
179
Thermal resistance
Four-layer board
8-pin PDIP
θ
JA
72
°C/W
8-pin NB SOIC
87
8-pin DFN
41
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