參數(shù)資料
型號: MC9S08PA60VLH
廠商: Freescale Semiconductor
文件頁數(shù): 34/37頁
文件大?。?/td> 0K
描述: IC MCU 8BIT 60KB FLASH 64LQFP
標準包裝: 160
系列: S08
核心處理器: S08
芯體尺寸: 8-位
速度: 20MHz
連通性: I²C,LIN,SPI,UART/USART
外圍設備: LVD,POR,PWM,WDT
輸入/輸出數(shù): 57
程序存儲器容量: 60KB(60K x 8)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 256 x 8
RAM 容量: 4K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據轉換器: A/D 16x12b
振蕩器型: 內部
工作溫度: -40°C ~ 105°C
封裝/外殼: 64-LQFP
包裝: 托盤
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
MSL
Moisture sensitivity level
3
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
-4000
+4000
V
VCDM
Electrostatic discharge voltage, charged-device model
-500
+500
V
ILAT
Latch-up current at ambient temperature of 105°C
-100
+100
mA
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
4.4 Voltage and current operating ratings
Absolute maximum ratings are stress ratings only, and functional operation at the
maxima is not guaranteed. Stress beyond the limits specified in below table may affect
device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this document.
This device contains circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages to this high-impedance
circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate
logic voltage level (for instance, either VSS or VDD) or the programmable pullup resistor
associated with the pin is enabled.
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
–0.3
5.8
V
IDD
Maximum current into VDD
120
mA
Table continues on the next page...
Ratings
MC9S08PT60 Series Data Sheet, Rev. 3, 4/2012.
6
Freescale Semiconductor, Inc.
相關PDF資料
PDF描述
VE-B33-CU-F3 CONVERTER MOD DC/DC 24V 200W
VE-B32-CU-F1 CONVERTER MOD DC/DC 15V 200W
MC9S08AC8CFJE IC MCU 8BIT 8K FLASH 32-LQFP
MC908QT2ACDWE IC MCU 8BIT 1.5K FLASH 8-SOIC
MC9S08QE16CLC MCU 8BIT 16K FLASH 32-LQFP
相關代理商/技術參數(shù)
參數(shù)描述
MC9S08PA60VQH 功能描述:8位微控制器 -MCU 8BIT,HCS08L60k RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9S08PA8AVTJ 功能描述:IC MCU 8BIT 8KB FLASH 20TSSOP 制造商:nxp usa inc. 系列:S08 包裝:管件 零件狀態(tài):在售 核心處理器:S08 核心尺寸:8-位 速度:20MHz 連接性:I2C,LIN,SPI,UART/USART 外設:LVD,POR,PWM,WDT I/O 數(shù):18 程序存儲容量:8KB(8K x 8) 程序存儲器類型:閃存 EEPROM 容量:256 x 8 RAM 容量:2K x 8 電壓 - 電源(Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據轉換器:A/D 12x12b 振蕩器類型:內部 工作溫度:-40°C ~ 105°C(TA) 封裝/外殼:20-TSSOP(0.173",4.40mm 寬) 供應商器件封裝:20-TSSOP 標準包裝:75
MC9S08PA8VLC 功能描述:8位微控制器 -MCU 8 BIT,HCS08L Core, 8k F RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
MC9S08PA8VLD 制造商:Freescale Semiconductor 功能描述:MC9S08PA8VLD - Bulk
MC9S08PA8VTG 功能描述:8位微控制器 -MCU 8 BIT,HCS08L Core, 8k F RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT