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參數(shù)資料
| 型號： | MC9S08LL16CLH |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 4/44頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 8BIT 16K FLASH 64-LQFP |
| 產(chǎn)品培訓(xùn)模塊： | LCD Design Solutions |
| 標準包裝： | 260 |
| 系列： | S08 |
| 核心處理器： | S08 |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 連通性： | I²C，SCI，SPI |
| 外圍設(shè)備： | LCD，LVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 38 |
| 程序存儲器容量： | 16KB（16K x 8） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 2K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 8x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 64-LQFP |
| 包裝： | 托盤 |
| 產(chǎn)品目錄頁面： | 727 (CN2011-ZH PDF) |
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MC9S08LL16 Series MCU Data Sheet, Rev. 7
Electrical Characteristics
Freescale Semiconductor
12
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body Model
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Charge
Device
Model
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Charge device model (CDM)
VCDM
±500
—
V
3
Latch-up current at TA = 85°CILAT
±100
—
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9S08LL36 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data |
| MC9S08LL36CLH | 功能描述:8位微控制器 -MCU S08 CPU, 36K FLASH, 64LQFP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08LL36CLK | 功能描述:8位微控制器 -MCU S08 CPU 64K Flash RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08LL64 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data |
| MC9S08LL64_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data |
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