The average chip-junction temperature " />
參數(shù)資料
型號(hào)： MC9S08GW32CLH
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 4/42頁(yè)
文件大?。?/td> 0K
描述： IC MCU 8BIT 32KB FLASH 64LQFP
標(biāo)準(zhǔn)包裝： 800
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 20MHz
連通性： I²C，LIN，SCI，SPI
外圍設(shè)備： LCD，PWM，WDT
輸入/輸出數(shù)： 57
程序存儲(chǔ)器容量： 32KB（32K x 8）
程序存儲(chǔ)器類(lèi)型： 閃存
RAM 容量： 2K x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 16x16b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 64-LQFP
包裝： 托盤(pán)
MC9S08GW64 Series MCU Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
12
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K (TJ + 273C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification, ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless instructed otherwise in the device specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body Model
Series resistance
R1
1500
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Charge
Device
Model
Series resistance
R1
0
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S08GW32CLK 功能描述:8位微控制器 -MCU S08 8bit Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08GW64 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:Covers: MC9S08GW64 and MC9S08GW32
MC9S08GW64_11 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:HC08 instruction set with added BGND instruction
MC9S08GW64CLH 功能描述:8位微控制器 -MCU S08 8bit Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
MC9S08GW64CLK 功能描述:8位微控制器 -MCU S08 8bit Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
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