參數(shù)資料
型號： MC9S08FL16CLC
廠商： Freescale Semiconductor
文件頁數(shù)： 19/34頁
文件大小： 0K
描述： MCU 8BIT 16K FLASH 32-LQFP
標準包裝： 250
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 20MHz
連通性： SCI
外圍設備： LVD，PWM，WDT
輸入/輸出數(shù)： 30
程序存儲器容量： 16KB（16K x 8）
程序存儲器類型： 閃存
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 4.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 12x8b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 32-LQFP
包裝： 托盤
MC9S08FL16 Series Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
26
5.11
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
D
Quantization
Error
8-bit mode
EQ
——
0.5
LSB2
D
Input Leakage
Error
8-bit mode
EIL
—
0.1
1
LSB2
Pad leakage2
* RAS
1 Typical values assume V
DDA = 5.0 V, Temp = 25 C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2 Based on input pad leakage current. Refer to pad electricals.
Table 14. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40
C to 85 CV
prog/erase
4.5
—
5.5
V
D
Supply voltage for read operation
VRead
4.5
—
5.5
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
5—
6.67
s
P
Byte program time (random location)2
tprog
9tFcyc
P
Byte program time (burst mode)2
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time2
tMass
20,000
tFcyc
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 5.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40 C to 85 C
T = 25
C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
—
10,000
—
cycles
C
Data retention5
tD_ret
5
100
—
years
Table 13. 8-Bit ADC Characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
C
Characteristic
Conditions
Symb
Min
Typ1
Max
Unit
Comment
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