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參數(shù)資料
| 型號(hào)： | MC9S08DZ60CLC |
| 廠商： | Freescale Semiconductor |
| 文件頁(yè)數(shù)： | 367/416頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 60K FLASH 4K RAM 32-LQFP |
| 標(biāo)準(zhǔn)包裝： | 1,250 |
| 系列： | S08 |
| 核心處理器： | S08 |
| 芯體尺寸： | 8-位 |
| 速度： | 40MHz |
| 連通性： | CAN，I²C，LIN，SCI，SPI |
| 外圍設(shè)備： | LVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 25 |
| 程序存儲(chǔ)器容量： | 60KB（60K x 8） |
| 程序存儲(chǔ)器類(lèi)型： | 閃存 |
| EEPROM 大?。?/td> | 2K x 8 |
| RAM 容量： | 4K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 10x12b |
| 振蕩器型： | 外部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 32-LQFP |
| 包裝： | 托盤(pán) |
| 配用： | DEMO9S08DZ60-ND - BOARD DEMO FOR MC9S08DZ60 EVB9S08DZ60-ND - BOARD EVAL FOR 9S08DZ60 |
Chapter 4 Memory
MC9S08DZ60 Series Data Sheet, Rev. 4
54
Freescale Semiconductor
NOTE
Before programming a particular byte in the Flash or EEPROM, the sector
in which that particular byte resides must be erased by a mass or sector erase
operation. Reprogramming bits in an already programmed byte without rst
performing an erase operation may disturb data stored in the Flash or
EEPROM memory.
2. Write the command code for the desired command to FCMD. The six valid commands are blank
check (0x05), byte program (0x20), burst program (0x25), sector erase (0x40), mass erase1 (0x41),
and sector erase abort (0x47). The command code is latched into the command buffer.
3. Write a 1 to the FCBEF bit in FSTAT to clear FCBEF and launch the command (including its
address and data information).
A partial command sequence can be aborted manually by writing a 0 to FCBEF any time after the
write to the memory array and before writing the 1 that clears FCBEF and launches the complete
command. Aborting a command in this way sets the FACCERR access error ag which must be
cleared before starting a new command.
A strictly monitored procedure must be obeyed or the command will not be accepted. This
minimizes the possibility of any unintended changes to the memory contents. The command
complete ag (FCCF) indicates when a command is complete. The command sequence must be
completed by clearing FCBEF to launch the command. Figure 4-2 is a owchart for executing all
of the commands except for burst programming and sector erase abort.
4. Wait until the FCCF bit in FSTAT is set. As soon as FCCF= 1, the operation has completed
successfully.
1. A mass erase is possible only when the Flash block is fully unprotected.
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| MC9S08DZ60CLCR | 功能描述:8位微控制器 -MCU 60KFLASH 4KRAM 32PIN RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08DZ60CLF | 功能描述:8位微控制器 -MCU 60K FLASH 4K RAM 48PIN RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08DZ60CLH | 功能描述:8位微控制器 -MCU 60K FLASH 4K RAM 64PIN RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08DZ60F1C | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:MC9S08DZ60 Series Data Sheet |
| MC9S08DZ60F1C32 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:8-Bit HCS08 Central Processor Unit (CPU) |
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