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| 型號： | MC9S08AC128MLKE |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 27/40頁 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 128K FLASH 80-LQFP |
| 標(biāo)準(zhǔn)包裝： | 90 |
| 系列： | S08 |
| 核心處理器： | S08 |
| 芯體尺寸： | 8-位 |
| 速度： | 40MHz |
| 連通性： | I²C，LIN，SCI，SPI |
| 外圍設(shè)備： | LVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 69 |
| 程序存儲器容量： | 128KB（128K x 8） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 8K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 16x10b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 80-LQFP |
| 包裝： | 托盤 |
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Chapter 3 Electrical Characteristics and Timing Specifications
MC9S08AC128 MCU Series Data Sheet, Rev. 4
Freescale Semiconductor
33
3.12
FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
Table 3-15. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typ1
1 Typical values are based on characterization data at V
DD = 5.0 V, 25C unless otherwise stated.
Max
Unit
1P
Supply voltage for program/erase
Vprog/erase
2.7
5.5
V
2P
Supply voltage for read operation
VRead
2.7
5.5
V
P
Internal FCLK frequency2
2 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4P
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
5P
Byte program time (random location)(2)
tprog
9
tFcyc
6C
Byte program time (burst mode)(2)
tBurst
4
tFcyc
7P
Page erase time3
3 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
8P
Mass erase time(2)
tMass
20,000
tFcyc
9C
Program/erase endurance4
TL to TH = –40C to + 125C
T = 25
C
4 Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
10
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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