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參數(shù)資料
| 型號： | MC9RS08LA8CFT |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 33/33頁 |
| 文件大?。?/td> | 0K |
| 描述： | MCU 8BIT 8K FLASH W/LCD 48-QFN |
| 標(biāo)準(zhǔn)包裝： | 260 |
| 系列： | RS08 |
| 核心處理器： | RS08 |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 連通性： | SCI，SPI |
| 外圍設(shè)備： | LCD，LVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 31 |
| 程序存儲器容量： | 8KB（8K x 8） |
| 程序存儲器類型： | 閃存 |
| RAM 容量： | 256 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 6x10b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 48-VFQFN 裸露焊盤 |
| 包裝： | 托盤 |
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Electrical Characteristics
MC9RS08LA8 Series MCU Data Sheet, Rev. 2
Freescale Semiconductor
9
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA× (PD)2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by
measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be
obtained by solving equations 1 and 2 iteratively for any value of TA.
3.4
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table 5. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
—
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
—
Latch-up
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9RS08LA8CLF | 功能描述:8位微控制器 -MCU 8BIT 8K FLASH W/ LCD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9RS08LA8CLF | 制造商:Freescale Semiconductor 功能描述:8BIT 8K FLASH W/ LCD |
| MC9RS08LE4 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCU Block Diagram |
| MC9RS08LE4_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:MCU Block Diagram |
| MC9RS08LE4CWL | 功能描述:8位微控制器 -MCU 8Bit 4K Flash w/ LCD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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