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參數(shù)資料
| 型號(hào)： | MC79M00 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 500 mA Negative Voltage Regulators(500 mA負(fù)向穩(wěn)壓器) |
| 中文描述： | 500毫安負(fù)電壓穩(wěn)壓器（500毫安的負(fù)向穩(wěn)壓器） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 72K |
| 代理商： | MC79M00 |
MC79M00
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C, unless otherwise noted.)
Rating
Symbol
Value
Unit
Input Voltage
V
I
–35
Vdc
Power Dissipation
Case 221A
T
A
= 25
°
C
Thermal Resistance, Junction–to–Ambient
Thermal Resistance, Junction–to–Case
Case 369 and 369A (DPAK)
T
A
= 25
°
C
Thermal Resistance, Junction–to–Ambient
Thermal Resistance, Junction–to–Case
P
D
θ
JA
θ
JC
Internally Limited
65
5.0
W
°
C/W
°
C/W
P
D
θ
JA
θ
JC
T
stg
Internally Limited
92
6.0
W
°
C/W
°
C/W
°
C
Storage Junction Temperature
–65 to +150
Junction Temperature
T
J
150
°
C
NOTE:
ESD data available upon request.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction–to–Ambient
R
θ
JA
65
°
C/W
Thermal Resistance, Junction–to–Case
R
θ
JC
5.0
°
C/W
MC79M05B, C
ELECTRICAL CHARACTERISTICS
(V
I
= –10 V, I
O
= 350 mA, T
low
to T
high
[Note 2], unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (T
J
= 25
°
C)
V
O
–4.8
–5.0
–5.2
Vdc
Line Regulation, T
J
= 25
°
C (Note 1)
–7.0 Vdc
≥
V
I
≥
–25 Vdc
–8.0 Vdc
≥
V
I
≥
–18 Vdc
Reg
line
–
–
7.0
2.0
50
30
mV
Load Regulation, T
J
= 25
°
C (Note 1)
5.0 mA
≤
I
O
≤
500 mA
Reg
load
–
30
100
mV
Output Voltage
–7.0 Vdc
≥
V
I
≥
–25 Vdc, 5.0 mA
≤
I
O
≤
350 mA
V
O
–4.75
–
–5.25
Vdc
Input Bias Current (T
J
= 25
°
C)
I
IB
–
4.3
8.0
mA
Input Bias Current Change
–8.0 Vdc
≥
V
I
≥
–25 Vdc, I
O
= 350 mA
5.0 mA
≤
I
O
≤
350 mA, V
I
= –10 V
I
IB
–
–
–
–
0.4
0.4
mA
Output Noise Voltage, T
A
= 25
°
C, 10 Hz
≤
f
≤
100 kHz
V
n
–
40
–
μ
V
Ripple Rejection (f = 120 Hz)
RR
54
66
–
dB
Dropout Voltage
I
O
= 500 mA, T
J
= 25
°
C
V
I
–V
O
–
1.1
–
Vdc
Average Temperature Coefficient of Output Voltage
I
O
= 5.0 mA, 0
°
C
≤
T
J
≤
125
°
C
V
O
/
T
–
0.2
–
mV/
°
C
NOTES:
1.Load and line regulation are specified at constant temperature. Change in V
O
due to heating effects must be taken into account separately. Pulse
testing with low duty cycle is used.
2.B = T
low
to T
high
, –40
°
C < T
< 125
°
C
C = T
low
to T
high
, 0
°
C < T
J
< 125
°
C
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