
MC74VHC595
http://onsemi.com
5
The
qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
C°
T J
=
90
C°
T J
=
100
C°
T J
=
1
10
C°
T J
=
130
C°
T J
=
120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 1. Failure Rate vs. Time
Junction Temperature
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
TA = ≤ 85°C
TA = ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
Minimum High-Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL
Maximum Low-Level
Input Voltage
2.0
3.0
4.5
5.5
0.59
0.9
1.35
1.65
0.59
0.9
1.35
1.65
0.59
0.9
1.35
1.65
V
VOH
Minimum High-Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = - 50 μA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = -4 mA
IOH = -8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
VOL
Maximum Low-Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 μA
2.0
3.0
4.5
0.0
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.52
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
± 0.1
± 1.0
± 1.0
μA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
4.0
40.0
40.0
μA
IOZ
Three-State Output
Off-State Current
VIN = VIH or VIL
VOUT = VCC or
GND
5.5
± 0.25
± 2.5
± 2.5
μA