參數(shù)資料
型號(hào): MC74VHC1G66DFT1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: ANALOG Switch
中文描述: 模擬開(kāi)關(guān)
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 330K
代理商: MC74VHC1G66DFT1
LESHAN RADIO COMPANY, LTD.
VHT66–2/6
MC74VHC1GT66
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
IS
I
IK
I
CC
P
D
Parameter
DC Supply Voltage
DC Input Voltage
Analog Output Voltage
Input Diode Current
DC Supply Current, V
CC
and GND
Power dissipation in still air
Value
Unit
V
V
V
mA
mA
mW
– 0.5 to + 7.0
– 0.5 to +7.0
–0.5 to +7.0
–20
+25
200
450
260
–65 to +150
>2000
> 200
N/A
± 500
SC–88A (Note 2.)
TSOP5 (Note 2.)
T
L
T
stg
V
ESD
Lead Temperature, 1 mm from Case for 10 s
Storage temperature
ESD Withstand Voltage
°C
°C
Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
Above V
CC
and Below GND at 125°C (Note 6)
V
I
LATCH–UP
Latch–Up Performance
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
eyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Derating – SC–88A Package: –3 mW/°C from 65°C
to 125°C
– TSOP5 Package: –6 mW/°C from 65°C
to 125°C
3. Tested to EIA/JESD22–A114–A
4. Tested to EIA/JESD22–A115–A
5. Tested to JESD22–C101–A
6. Tested to EIA/JESD78
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Time,
Temperature °C
Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
N
Figure 3. Failure Rate vs. Time Junction Temperature
1
1
10
100
1000
TIME, YEARS
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage
V
IN
DC Input Voltage
V
IS
Analog Input Voltage
T
A
Operating Temperature Range
t
r
,t
f
Input Rise and Fall Time
Min
2.0
GND
GND
– 55
0
0
Max
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
The
θ
JA
of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the
table and figure below.
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