參數(shù)資料
型號: MC74LVX4053M
廠商: ON SEMICONDUCTOR
元件分類: 運(yùn)動(dòng)控制電子
英文描述: Analog Multiplexer/ Demultiplexer High?Performance Silicon?Gate CMOS
中文描述: TRIPLE 2-CHANNEL, SGL ENDED MULTIPLEXER, PDSO16
封裝: EIAJ, SOP-16
文件頁數(shù): 5/16頁
文件大?。?/td> 141K
代理商: MC74LVX4053M
MC74LVX4053
http://onsemi.com
5
AC CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 3 ns)
Guaranteed Limit
V
CC
V
V
EE
V
55 to 25
°
C
85
°
C
125
°
C
Symbol
Parameter
Min
Typ
Max
Min
Max
Min
Max
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay,
Channel–Select to Analog
Output
(Figures 16 and 17)
2.5
3.0
4.5
3.0
0
0
0
3.0
40
28
23
23
45
30
25
25
50
35
30
28
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay,
Enable to Analog Output (Fig-
ures 14 and 15)
2.5
3.0
4.5
3.0
0
0
0
3.0
40
28
23
23
45
30
25
25
50
35
30
28
ns
t
PZL
,
t
PZH
Maximum Propagation Delay,
Enable to Analog Output (Fig-
ures 14 and 15)
2.5
3.0
4.5
3.0
0
0
0
3.0
40
28
23
23
45
30
25
25
50
35
30
28
ns
Typical @ 25
°
C, V
CC
= 5.0 V, V
EE
= 0V
45
C
PD
C
IN
Power Dissipation Capacitance (Figure 18) (Note 7)
pF
Maximum Input Capacitance, Channel–Select or Enable Inputs
10
pF
C
I/O
Maximum Capacitance
(All Switches Off)
Analog I/O
Common O/I
Feedthrough
10
10
1.0
pF
7. Used to determine the no–load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
.
ADDITIONAL APPLICATION CHARACTERISTICS
(GND = 0 V)
V
CC
V
V
EE
V
Typ
Symbol
Parameter
Condition
25
°
C
Unit
BW
Maximum On–Channel
Bandwidth or Minimum
Frequency Response
V
IS
=
(V
CC
– V
EE
)
Ref and Test Attn = 10 dB
Source Amplitude = 0 dB
(Figure 7)
3.0
4.5
6.0
3.0
0.0
0.0
0.0
3.0
80
80
80
80
MHz
V
ISO
Off–Channel Feedthrough
Isolation
f = 1 MHz; V
IS
=
(V
CC
– V
EE
)
Adjust Network Analyzer output to 10 dBm on each
output from the power splitter.
(Figures 8 and 9)
3.0
4.5
6.0
3.0
0.0
0.0
0.0
3.0
70
70
70
70
dB
V
ONL
Maximum Feedthrough
On Loss
V
IS
=
(V
CC
– V
EE
)
Adjust Network Analyzer output to 10 dBm on each
output from the power splitter.
(Figure 11)
3.0
4.5
6.0
3.0
0.0
0.0
0.0
3.0
2
2
2
2
dB
Q
Charge Injection
V
IN
= V
CC
to V
EE,
f
IS
= 1 kHz, t
r
= t
f
= 3 ns
R
IS
= 0 , C
L
= 1000 pF, Q = C
L
*
V
OUT
(Figure 10)
5.0
3.0
0.0
3.0
9.0
12
pC
THD
Total Harmonic Distortion
THD + Noise
f
IS
= 1 MHz, R
L
= 10 K , C
L
= 50 pF,
V
IS
= 5.0 V
PP
sine wave
V
IS
= 6.0 V
PP
sine wave
(Figure 19)
6.0
3.0
0.0
3.0
0.10
0.05
%
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