參數(shù)資料
型號(hào)： MC74HCT245AH
廠商： ON SEMICONDUCTOR
元件分類： 總線收發(fā)器
英文描述： HCT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDIP20
封裝： PLASTIC, DIP-20
文件頁數(shù)： 3/10頁
文件大?。?/td> 219K
代理商： MC74HCT245AH
MC74HCT245A
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
260
_C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating — Plastic DIP: – 10 mW/
_C from 65_ to 125_C
SOIC Package: – 7 mW/
_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/
_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time (Figure 1)
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25
_C
v 85_C
v 125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 A
4.5
5.5
2.0
2.0
2.0
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 A
4.5
5.5
0.8
0.8
0.8
V
VOH
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 A
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
3.98
3.84
3.7
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 A
4.5
5.5
0.1
0.1
0.1
V
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
0.26
0.33
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND, Pins 1 or 19
5.5
± 0.1
± 1.0
± 1.0
A
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 A
5.5
4.0
40
160
A
IOZ
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND, I/O Pins
5.5
± 0.5
± 5.0
± 10
A
ICC
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin =VCC or GND Other Inputs
≥ –55_C
25
_C to 125_C
Current
Vin = VCC or GND, Other In uts
lout = 0 A
5.5
2.9
2.4
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book
(DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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