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| 型號(hào)： | MC68HC908QY1CDW |
| 廠(chǎng)商： | Freescale Semiconductor |
| 文件頁(yè)數(shù)： | 115/184頁(yè) |
| 文件大小： | 0K |
| 描述： | IC MCU 1.5K FLASH 16-SOIC |
| 標(biāo)準(zhǔn)包裝： | 47 |
| 系列： | HC08 |
| 核心處理器： | HC08 |
| 芯體尺寸： | 8-位 |
| 速度： | 8MHz |
| 外圍設(shè)備： | LVD，POR，PWM |
| 輸入/輸出數(shù)： | 13 |
| 程序存儲(chǔ)器容量： | 1.5KB（1.5K x 8） |
| 程序存儲(chǔ)器類(lèi)型： | 閃存 |
| RAM 容量： | 128 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 包裝： | 管件 |
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Memory
MC68HC908QY/QT Family Data Sheet, Rev. 6
36
Freescale Semiconductor
8.
Wait for time, tPROG (minimum 30 μs).
9.
Repeat step 7 and 8 until all desired bytes within the row are programmed.
10.
Clear the PGM bit(1).
11.
Wait for time, tNVH (minimum 5 μs).
12.
Clear the HVEN bit.
13.
After time, tRCV (typical 1 μs), the memory can be accessed in read mode again.
NOTE
The COP register at location $FFFF should not be written between
steps 5–12, when the HVEN bit is set. Since this register is located at a
valid FLASH address, unpredictable behavior may occur if this location is
written while HVEN is set.
This program sequence is repeated throughout the memory until all data is programmed.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
2.6.5 FLASH Protection
Due to the ability of the on-board charge pump to erase and program the FLASH memory in the target
application, provision is made to protect blocks of memory from unintentional erase or program operations
due to system malfunction. This protection is done by use of a FLASH block protect register (FLBPR).
The FLBPR determines the range of the FLASH memory which is to be protected. The range of the
protected area starts from a location defined by FLBPR and ends to the bottom of the FLASH memory
($FFFF). When the memory is protected, the HVEN bit cannot be set in either ERASE or PROGRAM
operations.
NOTE
In performing a program or erase operation, the FLASH block protect
register must be read after setting the PGM or ERASE bit and before
asserting the HVEN bit.
When the FLBPR is programmed with all 0 s, the entire memory is protected from being programmed and
erased. When all the bits are erased (all 1’s), the entire memory is accessible for program and erase.
When bits within the FLBPR are programmed, they lock a block of memory. The address ranges are
shown in 2.6.6 FLASH Block Protect Register. Once the FLBPR is programmed with a value other than
$FF, any erase or program of the FLBPR or the protected block of FLASH memory is prohibited. Mass
erase is disabled whenever any block is protected (FLBPR does not equal $FF). The FLBPR itself can be
erased or programmed only with an external voltage, VTST, present on the IRQ pin. This voltage also
allows entry from reset into the monitor mode.
2. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing
PGM bit, must not exceed the maximum programming time, tPROG maximum.
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| MC68HC908QY1CP | 功能描述:IC MCU 1.5K FLASH 16-DIP RoHS:否 類(lèi)別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:HC08 其它有關(guān)文件:STM32F101T8 View All Specifications 特色產(chǎn)品:STM32 32-bit Cortex MCUs 標(biāo)準(zhǔn)包裝:490 系列:STM32 F1 核心處理器:ARM? Cortex?-M3 芯體尺寸:32-位 速度:36MHz 連通性:I²C，IrDA，LIN，SPI，UART/USART 外圍設(shè)備:DMA，PDR，POR，PVD，PWM，溫度傳感器，WDT 輸入/輸出數(shù):26 程序存儲(chǔ)器容量:64KB（64K x 8） 程序存儲(chǔ)器類(lèi)型:閃存 EEPROM 大小:- RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):2 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 10x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:36-VFQFN，36-VFQFPN 包裝:托盤(pán) 配用:497-10030-ND - STARTER KIT FOR STM32497-8853-ND - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL-ND - KIT IAR KICKSTART STM32 CORTEXM3497-8512-ND - KIT STARTER FOR STM32F10XE MCU497-8505-ND - KIT STARTER FOR STM32F10XE MCU497-8304-ND - KIT STM32 MOTOR DRIVER BLDC497-6438-ND - BOARD EVALUTION FOR STM32 512K497-6289-ND - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME-ND - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U-ND - BOARD EVAL MCBSTM32 + ULINK2更多... 其它名稱(chēng):497-9032STM32F101T8U6-ND |
| MC68HC908QY1CPE | 功能描述:8位微控制器 -MCU 1.5K FLASH W/O AD-LEAD RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC68HC908QY1MDT | 制造商:Motorola Inc 功能描述: 制造商:MOTOROLA 功能描述: |
| MC68HC908QY1MDTE | 功能描述:8位微控制器 -MCU 1.5K FLASH W/O ADC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC68HC908QY1MDW | 功能描述:8位微控制器 -MCU 8 Bit 8MHz RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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