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參數(shù)資料
| 型號： | MC34151D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | Single Output LDO, 250mA, Fixed(3.3V), Low Noise, Fast Transient Response 6-SOT-223 -40 to 85 |
| 中文描述： | 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 284K |
| 代理商： | MC34151D |
MC34151, MC33151
http://onsemi.com
7
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and overshoot.
Do not attempt to construct the driver circuit on
wire–wrap or plug–in prototype boards.
When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For
optimum drive performance, it is recommended that the
initial circuit design contains dual power supply bypass
capacitors connected with short leads as close to the VCC pin
and ground as the layout will permit. Suggested capacitors are
a low inductance 0.1
μ
F ceramic in parallel with a 4.7
μ
F
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely
critical and cannot be over emphasized.
The MC34151 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Figure 18. Enhanced System Performance with
Common Switching Regulators
Figure 19. MOSFET Parasitic Oscillations
Figure 20. Direct Transformer Drive
Figure 21. Isolated MOSFET Drive
Series gate resistor Rg may be needed to damp high frequency parasitic
oscillations caused by the MOSFET input capacitance and any series
wiring inductance in the gate–source circuit. Rg will decrease the
power dissipation due to excessive ringing, by preventing the output pin
frombeing driven below ground.
Output Schottky diodes are recommended when driving inductive loads at
high frequencies. The diodes reduce the driver’s power dissipation by
preventing the output pins frombeing driven above VCC and below ground.
+
–
5.7V
VCC
47
0.1
6
TL494
or
TL594
2
4
3
1
1
7
5
Vin
+
+
+
+
+
+
1
1N5819
D1
Rg
Vin
+
+
1
1
3
7
5
4 X
1N5819
+
+
+
+
3
1
1N
5819
Isolation
Boundary
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MC34151DG | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual Inverting MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC34151DR2 | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC34151DR2G | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual Inverting MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC34151DR2G-CUT TAPE | 制造商:ON 功能描述:MC Series 1.5 A 20 V 100 kOhm SMT High Speed Dual MOSFET Driver - SOIC-8 |
| MC34151P | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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