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參數(shù)資料
| 型號(hào)： | MC3346 |
| 廠商： | Motorola, Inc. |
| 元件分類： | 8位微控制器 |
| 英文描述： | ECONOLINE: RSZ/P - 1kVDC |
| 中文描述： | ECONOLINE：RSZ / P - 1kVDC 2kVDC隔離UL94V - 0封裝材料所需的散熱片，無(wú)外置。組件所需的環(huán)形磁ContinuousShort電路保護(hù)（/ P的后綴） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | MC3346 |
MC3346
2
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = +25
°
C, unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 10
μ
Adc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Substrate Breakdown Voltage
(IC = 10
μ
A)
Emitter–Base Breakdown Voltage
(IE = 10
μ
Adc)
Collector–Base Cutoff Current
(VCB = 10 Vdc, IE = 0)
DC Current Gain
(IC = 10 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 mAdc, VCE = 3.0 Vdc)
(IC = 10
μ
Adc, VCE = 3.0 Vdc)
Base–Emitter Voltage
(VCE = 3.0 Vdc, IE = 1.0 mAdc)
(VCE = 3.0 Vdc, IE = 10 mAdc)
Input Offset Current for Matched Pair Q1 and Q2
Magnitude of Input Offset Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Temperature Coefficient of Base–Emitter Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
V(BR)CBO
20
60
–
Vdc
V(BR)CEO
15
–
–
Vdc
V(BR)CIO
20
60
–
Vdc
V(BR)EBO
5.0
7.0
–
Vdc
ICBO
–
–
40
nAdc
hFE
–
40
–
140
130
60
–
–
–
–
VBE
–
–
0.72
0.8
–
–
Vdc
|IIO1 – IIO2|
–
0.3
2.0
μ
Adc
–
–
0.5
5.0
mVdc
VBE
D
T
–
–1.9
–
mV/
°
C
Temperature Coefficient
VIO
D
T
–
1.0
–
μ
V/
°
C
Collector–Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO
–
–
0.5
μ
Adc
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
(VCE = 3.0 Vdc, IC = 100
μ
Adc, RS = 1.0 k
, f = 1.0 kHz)
Forward Current Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Short Circuit Input Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Open Circuit Output Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Reverse Voltage Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Forward Transfer Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Input Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Output Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Current–Gain – Bandwidth Product
(VCE = 3.0 Vdc, IC = 3.0 mAdc)
Emitter–Base Capacitance
(VEB = 3.0 Vdc, IE = 0)
Collector–Base Capacitance
(VCB = 3.0 Vdc, IC = 0)
Collector–Substrate Capacitance
(VCS = 3.0 Vdc, IC = 0)
NF
–
3.25
–
dB
hFE
–
110
–
–
hie
–
3.5
–
k
hoe
–
15.6
–
μ
mhos
hre
–
1.8
–
x10–4
yfe
–
31–j1.5
–
–
yie
–
0.3 + j0.04
–
–
yoe
–
0.001 + j0.03
–
–
fT
300
550
–
MHz
Ceb
–
0.6
–
pF
Ccb
–
0.58
–
pF
CCI
–
2.8
–
pF
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