參數(shù)資料
型號(hào): MC33172VDR2G
廠商: ON Semiconductor
文件頁(yè)數(shù): 3/15頁(yè)
文件大小: 0K
描述: IC OPAMP DUAL LOW POWER 8SOIC
標(biāo)準(zhǔn)包裝: 1
放大器類型: 通用
電路數(shù): 2
轉(zhuǎn)換速率: 2.1 V/µs
增益帶寬積: 1.8MHz
電流 - 輸入偏壓: 20nA
電壓 - 輸入偏移: 2000µV
電流 - 電源: 220µA
電流 - 輸出 / 通道: 27mA
電壓 - 電源,單路/雙路(±): 3 V ~ 44 V,±1.5 V ~ 22 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 剪切帶 (CT)
其它名稱: MC33172VDR2GOSCT
MC33171, 2, 4, NCV33172, 4
http://onsemi.com
11
PACKAGE DIMENSIONS
8 LEAD PDIP
CASE 62605
ISSUE M
14
5
8
F
NOTE 5
D
e
b
L
A1
A
E3
E
A
TOP VIEW
C SEATING
PLANE
0.010
CA
SIDE VIEW
END VIEW
NOTE 3
DIM
MIN
NOM
MAX
INCHES
A
0.210
A1 0.015
b
0.014
0.018
0.022
C
0.008
0.010
0.014
D
0.355
0.365
0.400
D1 0.005
e
0.100 BSC
E
0.300
0.310
0.325
L
0.115
0.130
0.150
5.33
0.38
0.35
0.46
0.56
0.20
0.25
0.36
9.02
9.27
10.02
0.13
2.54 BSC
7.62
7.87
8.26
2.92
3.30
3.81
MIN
NOM
MAX
MILLIMETERS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION E IS MEASURED WITH THE LEADS RE-
STRAINED PARALLEL AT WIDTH E2.
4. DIMENSION E1 DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
E1
0.240
0.250
0.280
6.10
6.35
7.11
E2
E3
0.430
10.92
0.300 BSC
7.62 BSC
E1
D1
M
8X
e/2
E2
c
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