參數(shù)資料
型號: MC33157DW
廠商: ON SEMICONDUCTOR
元件分類: MOSFETs
英文描述: Tag-it(TM) HF-I Standard Transponder Inlays Square 0-RFIDN -25 to 70
中文描述: HALF BRDG BASED MOSFET DRIVER, PDSO16
封裝: PLASTIC, SO-16
文件頁數(shù): 9/12頁
文件大?。?/td> 269K
代理商: MC33157DW
MC33157
http://onsemi.com
9
Figure 11. TIMING DIAGRAM (no strike conditions)
ref
+V
CSWP
V
STRIKE
DETECTION
RESET
Output
Frequency status
1
0
F2
time
SD
SD
LOW
HIGH
F1
FSweep
F2 F1
F2 F1
F2
F3
ref
+V
V
FEND
t
F
t
SK
t
Blanking
Last restrike valid cycle
Blanking 10 ms typ
@ CPH
End of preheating sequence
tSF: Sweep Frequency time. This time is given by the RC network built with CSWEEP and RPH.
tSK: Sweep sequence recycle time. This time is derived by integrating a constant DC current in capacitor
CPH. There is a fixed ratio ( ) between the preheating time tPH and strike sequence recycle time tSK.
tfEND: Time during which f = (fENDSWP). This time is equal to tSK – tSF.
The controller repeats the fSWEEP and the strike sequence until there is a STRIKE signal comng fromthe external circuit, or until FOUR sequences have been counted.
Following a non strike situation, the controller goes in a full STOP and can be reinitialized by either pulling the VDD pin 1 to ground or by forcing a low to the RESET
pin 9. The controller assumes the lamp has struck when a negative going transient is applied on the STRIKE detection pin 10. On the other hand, in order to avoid false
strike information, the controller force a blank time between the end of tSWEEP and the start of the next sequence.
FSweep
FSweep
FSweep
Figure 12. OUTPUT = f (freq) @ Lc = 1.5 mH, Cs = 6.8 nF
5
9
1
1
2
2
2
3
3
4
4
4
5
5
6
6
6
7
7
8
8
8
9
9
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
C
Frequency (F)
I = V/
[(R
2
+ (L )
2
]
Z = Lw
I = V/
[(R
2
+ (L – 1/C )
2
]
Z @ RLCF
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