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參數(shù)資料
| 型號： | MC33152P |
| 廠商： | MOTOROLA INC |
| 元件分類： | MOSFETs |
| 英文描述： | HIGH SPEED DUAL MOSFET DRIVERS |
| 中文描述： | 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 250K |
| 代理商： | MC33152P |
MC34152 MC33152
LAYOUT CONSIDERATIONS
7
MOTOROLA ANALOG IC DEVICE DATA
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and
overshoot.
Do not attempt to construct the driver circuit
on wire–wrap or plug–in prototype boards.
When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For
optimum drive performance, it is recommended that the initial
circuit design contains dual power supply bypass capacitors
connected with short leads as close to the VCC pin and
ground as the layout will permit. Suggested capacitors are a
low inductance 0.1
μ
F ceramic in parallel with a 4.7
μ
F
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely critical
and cannot be over emphasized.
Figure 18. Enhanced System Performance with
Common Switching Regulators
VCC
Figure 19. MOSFET Parasitic Oscillations
The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Series gate resistor Rg may be needed to damp high frequency parasitic oscillations
caused by the MOSFET input capacitance and any series wiring inductance in the
gate–source circuit. Rg will decrease the MOSFET switching speed. Schottky diode
D1 can reduce the driver’s power dissipation due to excessive ringing, by preventing
the output pin from being driven below ground.
–
+
Vin
Rg
D1
1N5819
1
TL494
or
TL594
47
0.1
6
5.7V
2
4
3
1
1
7
5
Vin
Figure 20. Direct Transformer Drive
Figure 21. Isolated MOSFET Drive
Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver’s power dissipation by preventing the
output pins from being driven above VCC and below ground.
3
5
7
4 X
1N5819
1
1
Isolation
Boundary
1N
5819
3
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC33152PG | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC33152VDG | 功能描述:功率驅(qū)動器IC ANA HI SPD DUAL DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC33152VDR2 | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC33152VDR2G | 功能描述:功率驅(qū)動器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC33153 | 制造商:SPC Multicomp 功能描述:FUSE RESETTABLE RADIAL 5A 制造商:SPC Multicomp 功能描述:FUSE, PTC RESET, RADIAL, 16V, 5A 制造商:SPC Multicomp 功能描述:FUSE, PTC RESET, 16V, 5A, RADIAL; Holding Current:5A; Tripping Current:8.5A; Initial Resistance Max:0.044ohm; Operating Voltage:16V; PTC Fuse Case:Radial Leaded; External Depth:3mm; Initial Resistance Min:0.014ohm; Lead Spacing:5.1mm;RoHS Compliant: Yes |
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