參數(shù)資料
型號(hào)： MC33151VDR2G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： High Speed Dual MOSFET Drivers
中文描述： 1.5 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝： LEAD FREE, SOIC-8
文件頁(yè)數(shù)： 4/12頁(yè)
文件大小： 188K
代理商： MC33151VDR2G
MC34151, MC33151
http://onsemi.com
4
V
CC
= 12 V
V
in
= 5 V to 0 V
C
L
= 1.0 nF
T
A
= 25
°
C
Figure 8. Propagation Delay
Figure 9. Drive Output Clamp Voltage
versus Clamp Current
Figure 10. Drive Output Saturation Voltage
versus Load Current
Figure 11. Drive Output Saturation Voltage
versus Temperature
Figure 12. Drive Output Rise Time
Figure 13. Drive Output Fall Time
90%
10%
50 ns/DIV
90%
10%
10 ns/DIV
90%
10%
10 ns/DIV
I
O
, OUTPUT LOAD CURRENT (A)
V
High State Clamp
(Drive Output Driven Above V
CC
)
V
CC
GND
Low State Clamp
(Drive Output Driven Below Ground)
V
CC
= 12 V
80 s Pulsed Load
120 Hz Rate
T
A
= 25
°
C
I
O
, OUTPUT LOAD CURRENT (A)
V
Source Saturation
(Load to Ground)
V
CC
= 12 V
80 s Pulsed Load
120 Hz Rate
T
A
= 25
°
C
V
CC
Sink Saturation
(Load to V
CC
)
GND
T
A
, AMBIENT TEMPERATURE (
°
C)
V
Source Saturation
(Load to Ground)
Sink Saturation
(Load to V
CC
)
V
CC
= 12 V
I
source
= 400 mA
I
sink
= 400 mA
V
CC
I
source
= 10 mA
I
sink
= 10 mA
GND
Drive Output
Logic Input
V
CC
= 12 V
V
in
= 5 V to 0 V
C
L
= 1.0 nF
T
A
= 25
°
C
V
CC
= 12 V
V
in
= 5 V to 0 V
C
L
= 1.0 nF
T
A
= 25
°
C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
55
25
0
25
50
75
100
125
3.0
2.0
1.0
0
0
1.0
0
1.0
2.0
3.0
3.0
2.0
1.0
0
0
0.5
0.7
0.9
1.1
1.9
1.7
1.5
1.0
0.8
0.6
0
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