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| 型號(hào)： | MC14528BFG |
| 廠商： | ON Semiconductor |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC MULTIVIBRATOR DUAL 16SOEIAJ |
| 產(chǎn)品變化通告： | 1Q2012 Discontinuation 30/Mar/2012 |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 系列： | 4000B |
| 邏輯類型： | 單穩(wěn)態(tài) |
| 獨(dú)立電路： | 2 |
| 施密特觸發(fā)器輸入： | 無(wú) |
| 傳輸延遲： | 90ns |
| 輸出電流高，低： | 8.8mA，8.8mA |
| 電源電壓： | 3 V ~ 18 V |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.209"，5.30mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOEIAJ |
| 包裝： | 管件 |
MC14528B
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
Characteristic
Symbol
VDD
Vdc
55_C
25_C
125_C
Unit
Min
Max
Min
Typ
(Note 2)
Max
Min
Max
Output Voltage
“0” Level
Vin = VDD or 0
“1” Level
Vin = 0 or VDD
VOL
5.0
10
15
0.05
0
0.05
0.05
Vdc
VOH
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
5.0
10
15
4.95
9.95
14.95
Vdc
Input Voltage
“0” Level
(VO = 4.5 or 0.5 Vdc)
(VO = 9.0 or 1.0 Vdc)
(VO = 13.5 or 1.5 Vdc)
“1” Level
(VO = 0.5 or 4.5 Vdc)
(VO = 1.0 or 9.0 Vdc)
(VO = 1.5 or 13.5 Vdc)
VIL
5.0
10
15
1.5
3.0
4.0
2.25
4.50
6.75
1.5
3.0
4.0
1.5
3.0
4.0
Vdc
VIH
5.0
10
15
3.5
7.0
11
3.5
7.0
11
2.75
5.50
8.25
3.5
7.0
11
Vdc
Output Drive Current
(VOH = 2.5 Vdc)
Source
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
(VOL = 0.4 Vdc)
Sink
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
IOH
5.0
10
15
–1.2
–0.64
–1.6
–4.2
–1.0
–0.51
–1.3
–3.4
–1.7
–0.88
–2.25
–8.8
–0.7
–0.36
–0.9
–2.4
mAdc
IOL
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.88
2.25
8.8
0.36
0.9
2.4
mAdc
Input Current
Iin
15
± 0.1
±0.00001
± 0.1
± 1.0
mAdc
Input Capacitance
(Vin = 0)
Cin
5.0
7.5
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
5.0
10
20
0.005
0.010
0.015
5.0
10
20
150
300
600
mAdc
Total Supply Current at an external
load Capacitance (CL) and at ex-
ternal timing capacitance (CX), use
the formula. (Note 3)
IT
IT(CL, CX) = [(CL + 0.36CX)VDDf + 2x108
RXCX(VDD2)2f] x 103
where: IT in mA (per circuit), CL and CX in pF, RX in megohms,
VDD in Vdc, f in kHz is input frequency.
mAdc
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
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